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TBP18SA22N

Texas Instruments

TBP18SA22N by Texas Instruments

TBP18SA22N by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 70ns and operates in commercial temperature grades. This rectangular package with 20 terminals is ideal for applications requiring non-volatile memory storage in TTL technology environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,965 parts In-Stock

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Digiode

USA . 2,665 parts In-Stock

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2,665

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Corel Iberica Componentes, S.L.

Spain . 40 parts In-Stock

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40

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Sinequanon

UK . 15 parts In-Stock

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Parana Technologies

USA . 1,420 parts In-Stock

1+ parts

$3.685

100+ parts

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$4.192

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1,420

$3.685

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$4.192

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DigiPath Technology Company

USA . 259 parts In-Stock

1+ parts

$4.058

100+ parts

$3.734

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259

$4.058

$3.734

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ChromeModa Solutions

Germany . 5,700 parts In-Stock

1+ parts

$4.141

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$3.396

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5,700

$4.141

$3.396

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IDEA Electronic Components Group

UK . 1,699 parts In-Stock

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$4.141

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$3.727

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1,699

$4.141

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$3.727

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AZTECH Wire

Italy . 514 parts In-Stock

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$16.420

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514

$16.420

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One Stop Electronics

USA . 922 parts In-Stock

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$28.000

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922

$28.000

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Corphita

USA . 4,501 parts In-Stock

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Assy Fe

Spain . 40 parts In-Stock

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Overview

Unlock endless possibilities with the TBP18SA22N by Texas Instruments, a top-notch OTP ROM that guarantees unparalleled quality and reliability. Manufactured by industry leader Texas Instruments, this product is perfect for a wide range of applications. Whether you're looking to enhance your electronics project or streamline your industrial processes, this versatile component has got you covered. With a 256X8 organization and lightning-fast access time of just 70 ns, this OTP ROM offers exceptional value and benefits to customers seeking cutting-edge technology at an affordable price. Upgrade your system today with the TBP18SA22N and experience the difference Texas Instruments can make!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the OTP ROM, ensuring reliability and longevity.

Nominal Supply Voltage / Vsup (V): 5

Having a standard supply voltage of 5V makes it compatible with most common electronic systems and easy to integrate.

No. of Terminals: 20

Sufficient number of terminals allow for easy connection and interfacing with other components in the system.

Memory Width: 8

With a memory width of 8 bits, this OTP ROM can store and retrieve data efficiently in byte-sized chunks.

Technology: TTL

TTL technology ensures reliable and high-speed data transmission, making this OTP ROM suitable for applications requiring fast access times.

Maximum Operating Temperature: 70 °C

The OTP ROM can operate efficiently at a wide range of temperatures, allowing it to be used in various environmental conditions.

Technical Specifications

OTP ROM TBP18SA22N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18SA22N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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