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CBP18S22MJ

Texas Instruments

CBP18S22MJ by Texas Instruments

The Texas Instruments CBP18S22MJ is a MIL-STD-883 Class B OTP ROM with 256x8 organization and 2048-bit memory density. It operates b/w -55 to 125°C, has a max access time of 80ns, and uses TTL technology. Ideal for military applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,864 parts In-Stock

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Digiode

USA . 3,158 parts In-Stock

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3,158

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Bristol Electronics

USA . 3 parts In-Stock

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3

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MISTER SPROCKETS

USA . 3 parts In-Stock

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Microfarads

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 349 parts In-Stock

1+ parts

$3.306

100+ parts

-

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$3.830

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349

$3.306

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$3.830

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DigiPath Technology Company

USA . 2,009 parts In-Stock

1+ parts

$3.641

100+ parts

$3.349

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2,009

$3.641

$3.349

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ChromeModa Solutions

Germany . 4,861 parts In-Stock

1+ parts

$3.715

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$3.046

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4,861

$3.715

$3.046

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IDEA Electronic Components Group

UK . 298 parts In-Stock

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$3.715

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$3.344

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298

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$3.344

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AZTECH Wire

Italy . 593 parts In-Stock

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$17.090

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593

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One Stop Electronics

USA . 663 parts In-Stock

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$19.000

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Native Components

USA . 952 parts In-Stock

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$96.200

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$92.352

952

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$92.352

Northwest PG Solutions

USA . 821 parts In-Stock

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$105.820

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821

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Corphita

USA . 1,069 parts In-Stock

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Overview

Unlock the power of reliable and durable memory storage with the Texas Instruments CBP18S22MJ OTP ROM. Crafted with the highest quality materials and backed by Texas Instruments' renowned reputation for excellence, this product offers unparalleled value and benefits. Ideal for a wide range of military and industrial applications, this OTP ROM boasts a high memory density and fast access time, making it a versatile and essential component for any project. Trust in Texas Instruments to deliver superior performance and quality with the CBP18S22MJ.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection for the OTP ROM memory IC, ensuring durability and reliability in various environmental conditions.

Screening Level: MIL-STD-883 Class B (Modified)

The modified MIL-STD-883 Class B screening ensures high quality and reliability of the OTP ROM memory IC, meeting stringent military standards.

Nominal Supply Voltage / Vsup (V): 5

Operating at a supply voltage of 5V, this OTP ROM memory IC is compatible with standard voltage levels, making it easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this OTP ROM memory IC can withstand elevated temperatures, ensuring reliable performance in harsh environments.

Organization: 256X8

The 256x8 organization allows for efficient and organized storage of data in the OTP ROM memory IC, providing quick access to information when needed.

Technology: TTL

Utilizing TTL technology, this OTP ROM memory IC offers fast and reliable data processing, making it suitable for high-speed applications.

Memory IC Type: OTP ROM

Being an OTP ROM memory IC, this product offers non-volatile data storage, ensuring that data remains intact even when power is turned off.

Maximum Access Time: 80 ns

With a maximum access time of 80 ns, this OTP ROM memory IC allows for quick retrieval of data, enhancing system performance.

Technical Specifications

OTP ROM CBP18S22MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

CBP18S22MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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