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SNJ54S471J

Texas Instruments

SNJ54S471J by Texas Instruments

SNJ54S471J by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. It operates at a supply voltage of 5V, has a max access time of 80ns, and supports TTL technology. This MILITARY-grade IC in CERAMIC package is ideal for applications requiring fast and reliable non-volatile memory storage.

Median Price

$47.160

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 31 parts In-Stock

1+ parts

$47.160

100+ parts

-

1k+ parts

-

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31

$47.160

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-

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Vyrian

USA . 8,764 parts In-Stock

1+ parts

-

100+ parts

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8,764

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Digiode

USA . 3,002 parts In-Stock

1+ parts

-

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3,002

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 963 parts In-Stock

1+ parts

$2.746

100+ parts

$254.975

1k+ parts

$2.471

10k+ parts

-

963

$2.746

$254.975

$2.471

-

DigiPath Technology Company

USA . 961 parts In-Stock

1+ parts

$3.023

100+ parts

$2.781

1k+ parts

-

10k+ parts

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961

$3.023

$2.781

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-

ChromeModa Solutions

Germany . 3,881 parts In-Stock

1+ parts

$3.085

100+ parts

$2.530

1k+ parts

-

10k+ parts

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3,881

$3.085

$2.530

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IDEA Electronic Components Group

UK . 1,800 parts In-Stock

1+ parts

$3.085

100+ parts

-

1k+ parts

$2.776

10k+ parts

-

1,800

$3.085

-

$2.776

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One Stop Electronics

USA . 993 parts In-Stock

1+ parts

$14.000

100+ parts

-

1k+ parts

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993

$14.000

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AZTECH Wire

Italy . 498 parts In-Stock

1+ parts

$14.994

100+ parts

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498

$14.994

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Corphita

USA . 4,495 parts In-Stock

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4,495

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Overview

Unlock the power of reliable data storage with the SNJ54S471J from Texas Instruments. Designed with cutting-edge technology and a commitment to quality, this OTP ROM offers unparalleled performance in a variety of military-grade applications. Trust in Texas Instruments' reputation for excellence in semiconductor manufacturing as you experience the value and benefits of this product. Say goodbye to data loss worries with the SNJ54S471J, providing fast access times and secure memory storage for your critical systems. Elevate your projects with the unmatched advantages of this top-of-the-line OTP ROM solution.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal conductivity, making them suitable for high temperature applications and improving overall product reliability.

Screening Level: 38535Q/M;38534H;883B

This screening level ensures that the product meets stringent quality and reliability standards, making it ideal for military and aerospace applications where reliability is crucial.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this product compatible with standard 5V systems, increasing its versatility and ease of integration.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM can withstand high temperature environments, making it suitable for harsh operating conditions.

Memory Density: 2048 bit

With a memory density of 2048 bits, this OTP ROM provides ample storage capacity for storing critical data or program codes.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transfer, making this OTP ROM suitable for applications requiring high-speed operation.

Maximum Access Time: 80 ns

Having a maximum access time of 80 ns ensures quick access to stored data, optimizing system performance and responsiveness.

Technical Specifications

OTP ROM SNJ54S471J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNJ54S471J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-119-4703, 5962011194703

NIIN

011194703

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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