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SNJ54S475J

Texas Instruments

SNJ54S475J by Texas Instruments

SNJ54S475J by Texas Instruments is a MILITARY-grade OTP ROM with 512x8 organization and 4096-bit memory density. It operates b/w -55°C to 125°C, has a max access time of 85ns, and consumes up to 155mA. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,156 parts In-Stock

1+ parts

-

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8,156

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Digiode

USA . 852 parts In-Stock

1+ parts

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1k+ parts

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10k+ parts

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852

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 612 parts In-Stock

1+ parts

$3.418

100+ parts

-

1k+ parts

$3.942

10k+ parts

-

612

$3.418

-

$3.942

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DigiPath Technology Company

USA . 851 parts In-Stock

1+ parts

$3.763

100+ parts

$3.462

1k+ parts

-

10k+ parts

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851

$3.763

$3.462

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ChromeModa Solutions

Germany . 5,731 parts In-Stock

1+ parts

$3.840

100+ parts

$3.149

1k+ parts

-

10k+ parts

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5,731

$3.840

$3.149

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IDEA Electronic Components Group

UK . 2,268 parts In-Stock

1+ parts

$3.840

100+ parts

-

1k+ parts

$3.456

10k+ parts

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2,268

$3.840

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$3.456

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AZTECH Wire

Italy . 500 parts In-Stock

1+ parts

$13.195

100+ parts

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500

$13.195

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One Stop Electronics

USA . 915 parts In-Stock

1+ parts

$26.000

100+ parts

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915

$26.000

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Corphita

USA . 3,980 parts In-Stock

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3,980

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Overview

Elevate your projects with the SNJ54S475J by Texas Instruments, a top-of-the-line OTP ROM that offers unparalleled quality and reliability. Manufactured with precision and expertise, this product is designed to meet the highest standards in performance and durability. Ideal for a wide range of applications, this OTP ROM provides exceptional value and benefits to customers seeking a dependable solution for their projects. Trust Texas Instruments for cutting-edge technology and superior products that deliver unmatched advantages in the industry.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package body provides durability and excellent thermal conductivity, making the product suitable for harsh operating conditions.

Screening Level: 38535Q/M;38534H;883B

The high screening level ensures reliability and quality, meeting military standards for performance and durability.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various electronic systems and circuit boards.

No. of Terminals: 24

The ample number of terminals provide connectivity options and flexibility in circuit design.

Package Style (Meter): IN-LINE

The in-line package style simplifies installation and connection processes, making it user-friendly.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance in a wide range of environmental conditions.

Organization: 512X8

The organization of 512 words by 8 memory width allows for efficient data storage and access.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures functionality even in extreme cold environments.

Temperature Grade: MILITARY

The military-grade temperature rating indicates high reliability and performance in demanding applications.

Technology: TTL

The TTL technology offers fast and efficient data processing, suitable for a wide range of applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and ease of soldering during installation.

Maximum Supply Current: 155 mA

The low maximum supply current ensures energy efficiency and reduced power consumption.

No. of Words: 512 words

The ample number of words allows for storing a significant amount of data for applications requiring memory capacity.

Memory Width: 8

The memory width of 8 bits offers versatility in data storage and retrieval operations.

Terminal Pitch: 2.54 mm

The standard terminal pitch of 2.54mm facilitates easy integration and connections in electronic circuits and systems.

No. of Words Code: 512

The inclusion of 512 words code ensures compatibility and efficient data handling in accordance with industry standards.

Memory Density: 4096 bit

The high memory density of 4096 bits allows for storing a large amount of information in a compact format.

Memory IC Type: OTP ROM

The OTP ROM type ensures non-volatile memory storage and secure data retention without the need for a power supply.

Maximum Access Time: 85 ns

The fast maximum access time of 85 nanoseconds enables quick data retrieval and processing, enhancing overall system performance.

Technical Specifications

OTP ROM SNJ54S475J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNJ54S475J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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