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SNJ54S188J

Texas Instruments

SNJ54S188J by Texas Instruments

SNJ54S188J by Texas Instruments is a 32x8 OTP ROM with 50ns max access time, operating b/w -55 to 125°C. It has a supply voltage of 5V and max current draw of 110mA. Ideal for military-grade applications requiring reliable memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,362 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8,362

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-

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Digiode

USA . 3,650 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,650

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,249 parts In-Stock

1+ parts

$2.600

100+ parts

-

1k+ parts

$3.091

10k+ parts

-

1,249

$2.600

-

$3.091

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ChromeModa Solutions

Germany . 2,867 parts In-Stock

1+ parts

$2.921

100+ parts

$2.395

1k+ parts

-

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2,867

$2.921

$2.395

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IDEA Electronic Components Group

UK . 2,369 parts In-Stock

1+ parts

$2.921

100+ parts

-

1k+ parts

$2.629

10k+ parts

-

2,369

$2.921

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$2.629

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One Stop Electronics

USA . 520 parts In-Stock

1+ parts

$5.000

100+ parts

-

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520

$5.000

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AZTECH Wire

Italy . 830 parts In-Stock

1+ parts

$10.624

100+ parts

-

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830

$10.624

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Corphita

USA . 3,993 parts In-Stock

1+ parts

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3,993

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DigiPath Technology Company

USA . 1,415 parts In-Stock

1+ parts

-

100+ parts

$2.634

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1,415

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$2.634

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Overview

Unlock the power of reliable data storage with the SNJ54S188J by Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled performance in a variety of military-grade applications. With a nominal supply voltage of 5V and an organization of 32x8, this product ensures optimal functionality and efficiency. Trust Texas Instruments to deliver quality and innovation in every component, providing customers with the value and benefits they need for success. Elevate your projects with the SNJ54S188J and experience the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent durability and heat resistance, making this OTP ROM suitable for harsh operating environments.

Screening Level: 38535Q/M;38534H;883B

This high screening level ensures quality and reliability in performance, making it a dependable choice for critical applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space and ease of integration into various systems.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage, this OTP ROM is compatible with a wide range of systems and power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this OTP ROM can withstand elevated temperatures without compromising performance.

Organization: 32X8

The 32X8 organization provides a good balance between storage capacity and access speed, ideal for many applications requiring efficient data retrieval.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transfer, making this OTP ROM a suitable choice for high-speed applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for secure and stable connections, making installation and maintenance easier.

Memory IC Type: OTP ROM

Being an OTP ROM, this memory IC offers non-volatile storage capabilities, ensuring data retention even when power is lost.

Maximum Access Time: 50 ns

With a fast maximum access time of 50 ns, this OTP ROM enables quick retrieval of stored data, enhancing system performance.

Technical Specifications

OTP ROM SNJ54S188J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNJ54S188J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-204-1654, 5962012041654, 5962-01-204-1653, 5962012041653, 5962-01-135-1553, 5962011351553, 5962-01-244-8515, 5962012448515, 5962-01-204-0682, 5962012040682, 5962-01-204-1660, 5962012041660, 5962-01-237-2535, 5962012372535

NIIN

012041654, 012041653, 011351553, 012448515, 012040682, 012041660, 012372535

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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