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SNJ54S475W

Texas Instruments

SNJ54S475W by Texas Instruments

SNJ54S475W by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. Operating b/w -55°C to 125°C, it has a max access time of 85ns and consumes up to 155mA supply current. Ideal for military-grade applications requiring fast and reliable non-volatile memory storage in a compact flatpack package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,371 parts In-Stock

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8,371

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Digiode

USA . 2,247 parts In-Stock

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2,247

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 579 parts In-Stock

1+ parts

$2.225

100+ parts

-

1k+ parts

$2.729

10k+ parts

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579

$2.225

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$2.729

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DigiPath Technology Company

USA . 1,607 parts In-Stock

1+ parts

$2.450

100+ parts

-

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1,607

$2.450

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ChromeModa Solutions

Germany . 3,999 parts In-Stock

1+ parts

$2.500

100+ parts

$2.050

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3,999

$2.500

$2.050

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IDEA Electronic Components Group

UK . 1,448 parts In-Stock

1+ parts

$2.500

100+ parts

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1k+ parts

$2.250

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1,448

$2.500

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$2.250

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AZTECH Wire

Italy . 780 parts In-Stock

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$11.025

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780

$11.025

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One Stop Electronics

USA . 1,229 parts In-Stock

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$24.000

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1,229

$24.000

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Corphita

USA . 1,827 parts In-Stock

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1,827

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Overview

Elevate your projects with the SNJ54S475W from Texas Instruments, a top-of-the-line OTP ROM that offers unmatched quality and reliability. With a military-grade temperature grade and advanced TTL technology, this flatpack memory device ensures optimal performance in extreme conditions. Whether you're designing aerospace systems or industrial machinery, this 512-word, 8-bit memory IC provides fast access times and high memory density for seamless operation. Trust Texas Instruments for cutting-edge solutions that deliver value and efficiency to your applications.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides durability and reliability, making this product suitable for harsh environments.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly processes.

Screening Level: 38535Q/M;38534H;883B

High screening levels ensure quality and reliability, meeting stringent military standards for performance.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space and easy placement on circuit boards.

Maximum Operating Temperature: 125 °C

High maximum operating temperature range ensures reliability and performance in a variety of operating conditions.

Organization: 512X8

The 512x8 organization provides a good balance between storage capacity and data retrieval efficiency.

Technology: TTL

TTL technology offers fast and reliable data transfer capabilities, enhancing overall product performance.

Memory IC Type: OTP ROM

OTP ROM technology ensures secure and non-volatile storage of data, making it ideal for applications requiring data integrity.

Technical Specifications

OTP ROM SNJ54S475W attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDFP-F24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DFP

Package Equivalence Code:

FL24,.4

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

SNJ54S475W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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