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TBP24SA81-55N1

Texas Instruments

TBP24SA81-55N1 by Texas Instruments

TBP24SA81-55N1 by Texas Instruments is a 2Kx4 OTP ROM with 8192-bit memory density and 55ns max access time. It operates b/w 0°C to 70°C, making it suitable for commercial applications requiring fast and reliable non-volatile memory storage in a compact rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,201 parts In-Stock

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8,201

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Digiode

USA . 656 parts In-Stock

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656

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 912 parts In-Stock

1+ parts

$2.395

100+ parts

-

1k+ parts

$2.892

10k+ parts

-

912

$2.395

-

$2.892

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DigiPath Technology Company

USA . 490 parts In-Stock

1+ parts

$2.637

100+ parts

$2.426

1k+ parts

-

10k+ parts

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490

$2.637

$2.426

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ChromeModa Solutions

Germany . 4,906 parts In-Stock

1+ parts

$2.691

100+ parts

$2.207

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-

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4,906

$2.691

$2.207

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IDEA Electronic Components Group

UK . 2,181 parts In-Stock

1+ parts

$2.691

100+ parts

-

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$2.422

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2,181

$2.691

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$2.422

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One Stop Electronics

USA . 1,013 parts In-Stock

1+ parts

$7.000

100+ parts

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1,013

$7.000

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AZTECH Wire

Italy . 540 parts In-Stock

1+ parts

$18.926

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540

$18.926

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Corphita

USA . 616 parts In-Stock

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616

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the TBP24SA81-55N1 OTP ROM. This versatile component offers a wide range of applications, ensuring optimal performance in various electronic devices. Trust in Texas Instruments' renowned expertise in semiconductor technology to deliver a product that exceeds expectations. With fast access times and high memory density, this OTP ROM provides exceptional value to customers seeking cutting-edge solutions for their projects. Upgrade your system with the TBP24SA81-55N1 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and resistant to impact, enhancing the durability of the product.

No. of Terminals: 18

Having 18 terminals allows for more connectivity options and flexibility in design.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this OTP ROM can reliably function in a wide range of environmental conditions.

Organization: 2KX4

The organization of 2KX4 means that this OTP ROM has a capacity of 2K words with a memory width of 4, providing ample space for storing data efficiently.

Technology: TTL

The use of TTL technology ensures fast and reliable data transmission, making this OTP ROM suitable for high-performance applications.

Memory Density: 8192 bit

With a memory density of 8192 bit, this OTP ROM can store a large amount of data in a compact space.

Maximum Access Time: 55 ns

The maximum access time of 55 ns ensures quick retrieval of data, leading to efficient operation of the OTP ROM.

Technical Specifications

OTP ROM TBP24SA81-55N1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-PDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24SA81-55N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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