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SN74S474N1

Texas Instruments

SN74S474N1 by Texas Instruments

SN74S474N1 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates at 5V, has a max access time of 75ns, and consumes up to 155mA. This IC is ideal for commercial applications requiring non-volatile memory storage in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,821 parts In-Stock

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8,821

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Digiode

USA . 840 parts In-Stock

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840

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 835 parts In-Stock

1+ parts

$5.149

100+ parts

-

1k+ parts

$5.745

10k+ parts

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835

$5.149

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$5.745

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DigiPath Technology Company

USA . 399 parts In-Stock

1+ parts

$5.669

100+ parts

$5.216

1k+ parts

-

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399

$5.669

$5.216

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ChromeModa Solutions

Germany . 2,114 parts In-Stock

1+ parts

$5.785

100+ parts

$4.744

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2,114

$5.785

$4.744

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IDEA Electronic Components Group

UK . 1,856 parts In-Stock

1+ parts

$5.785

100+ parts

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$5.206

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1,856

$5.785

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$5.206

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AZTECH Wire

Italy . 343 parts In-Stock

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$8.415

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343

$8.415

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One Stop Electronics

USA . 681 parts In-Stock

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$22.000

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681

$22.000

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Corphita

USA . 3,305 parts In-Stock

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3,305

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Overview

Unlock endless possibilities with the Texas Instruments SN74S474N1 OTP ROM. Manufactured by a trusted industry leader, this high-quality product offers reliable performance and versatility for a wide range of applications. With its 512x8 organization and 4096-bit memory density, this OTP ROM delivers fast access times and seamless operation. Whether you're designing consumer electronics or industrial machinery, this product provides the value, benefits, and advantages you need to bring your projects to life. Choose Texas Instruments for excellence in innovation and quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the OTP ROM, ensuring a longer lifespan and reliable performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is a common standard in many electronic systems, making this OTP ROM compatible with a wide range of applications.

Organization: 512X8

With an organization of 512X8, this OTP ROM can store a total of 512 words with each word having a width of 8 bits, making it suitable for storing program code or data.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data processing, making this OTP ROM an efficient choice for applications requiring quick access times.

Maximum Access Time: 75 ns

The maximum access time of 75 ns indicates that data can be retrieved quickly from this OTP ROM, making it suitable for high-speed applications.

Technical Specifications

OTP ROM SN74S474N1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S474N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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