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SN74S2708N1

Texas Instruments

SN74S2708N1 by Texas Instruments

SN74S2708N1 by Texas Instruments is a 1KX8 OTP ROM with 8192-bit memory density. It operates at temperatures from 0 to 70°C, with a max access time of 70ns. Ideal for commercial applications requiring reliable TTL technology in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,922 parts In-Stock

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2,922

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Digiode

USA . 153 parts In-Stock

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153

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,212 parts In-Stock

1+ parts

$4.373

100+ parts

-

1k+ parts

$4.791

10k+ parts

-

2,212

$4.373

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$4.791

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DigiPath Technology Company

USA . 931 parts In-Stock

1+ parts

$4.815

100+ parts

$4.430

1k+ parts

-

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931

$4.815

$4.430

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ChromeModa Solutions

Germany . 6,616 parts In-Stock

1+ parts

$4.913

100+ parts

$4.029

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-

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6,616

$4.913

$4.029

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IDEA Electronic Components Group

UK . 1,832 parts In-Stock

1+ parts

$4.913

100+ parts

-

1k+ parts

$4.422

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1,832

$4.913

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$4.422

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AZTECH Wire

Italy . 591 parts In-Stock

1+ parts

$6.210

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591

$6.210

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One Stop Electronics

USA . 1,271 parts In-Stock

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$28.000

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1,271

$28.000

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Corphita

USA . 2,127 parts In-Stock

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2,127

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Overview

Unlock endless possibilities with the SN74S2708N1 by Texas Instruments, a high-quality OTP ROM that offers reliability and performance like no other. Manufactured by the industry leader in semiconductor technology, this product is perfect for applications requiring non-volatile memory storage. With its versatile design and advanced technology, customers can trust in the value and benefits it provides, making it the ideal choice for all their memory needs. Invest in the SN74S2708N1 today and experience unparalleled quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the OTP ROM, ensuring a longer lifespan.

No. of Terminals: 24

Having 24 terminals allows for efficient connectivity and integration with other systems or devices.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can function reliably in various environments.

Organization: 1KX8

The 1KX8 organization means the OTP ROM has a capacity of 1024 words, providing ample storage space for data and instructions.

Technology: TTL

Utilizing TTL technology ensures compatibility with a wide range of systems and devices.

Memory Density: 8192 bit

With a memory density of 8192 bit, this OTP ROM can store a significant amount of data and instructions.

Maximum Access Time: 70 ns

A maximum access time of 70 nanoseconds ensures fast and efficient retrieval of data, improving overall performance.

Technical Specifications

OTP ROM SN74S2708N1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

175 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S2708N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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