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JBP34SA162MJ

Texas Instruments

JBP34SA162MJ by Texas Instruments

JBP34SA162MJ by Texas Instruments is a MILITARY-grade OTP ROM with 4KX4 organization, 16384-bit memory density, and 4096 words. It operates b/w -55°C to 125°C, making it suitable for rugged environments requiring reliable non-volatile memory storage in military applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,135 parts In-Stock

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7,135

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Digiode

USA . 4,616 parts In-Stock

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4,616

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,461 parts In-Stock

1+ parts

$3.099

100+ parts

-

1k+ parts

$3.617

10k+ parts

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1,461

$3.099

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$3.617

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DigiPath Technology Company

USA . 567 parts In-Stock

1+ parts

$3.412

100+ parts

-

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567

$3.412

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ChromeModa Solutions

Germany . 331 parts In-Stock

1+ parts

$3.482

100+ parts

$2.855

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331

$3.482

$2.855

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IDEA Electronic Components Group

UK . 106 parts In-Stock

1+ parts

$3.482

100+ parts

-

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$3.134

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106

$3.482

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$3.134

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AZTECH Wire

Italy . 696 parts In-Stock

1+ parts

$6.635

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696

$6.635

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One Stop Electronics

USA . 853 parts In-Stock

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$27.000

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853

$27.000

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Corphita

USA . 3,665 parts In-Stock

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Overview

Experience top-notch quality and reliability with the Texas Instruments JBP34SA162MJ OTP ROM. Manufactured by a trusted industry leader, this ceramic package offers unparalleled performance for military-grade applications. With a memory density of 16384 bits and 4Kx4 organization, this product ensures optimal functionality in a compact design. Trust Texas Instruments to deliver the best-in-class technology for your critical projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal conductivity, making them suitable for high temperature applications.

Screening Level: 38535Q/M;38534H;883B

High screening levels ensure reliability and quality, meeting stringent military standards.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy integration into circuit designs.

Max Operating Temperature: 125 °C

With a high operating temperature, this OTP ROM can withstand harsh environmental conditions.

Organization: 4KX4

The organization of 4KX4 allows for efficient data storage and retrieval in a compact form factor.

Technology: TTL

TTL technology offers fast operation and low power consumption, ideal for high-performance applications.

Memory Width: 4

A memory width of 4 bits allows for storing and accessing multiple data bits simultaneously, enhancing efficiency.

Terminal Pitch: 2.54 mm

Standard terminal pitch facilitates easy assembly and compatibility with existing equipment.

Memory Density: 16384 bit

High memory density enables storing a large amount of data in a compact space, maximizing storage capacity.

Technical Specifications

OTP ROM JBP34SA162MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T20

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

20

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP34SA162MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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