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TBP18SA46JP4

Texas Instruments

TBP18SA46JP4 by Texas Instruments

TBP18SA46JP4 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates b/w 0-70°C, has a max access time of 75ns, and consumes up to 155mA. Ideal for commercial applications requiring reliable non-volatile memory in a ceramic rectangular package with dual terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,774 parts In-Stock

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Digiode

USA . 1,194 parts In-Stock

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1,194

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Distributors (Availability)

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Parana Technologies

USA . 1,980 parts In-Stock

1+ parts

$5.142

100+ parts

-

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$5.738

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1,980

$5.142

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$5.738

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DigiPath Technology Company

USA . 1,020 parts In-Stock

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$5.662

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$5.662

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ChromeModa Solutions

Germany . 6,630 parts In-Stock

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$5.778

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$4.738

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6,630

$5.778

$4.738

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IDEA Electronic Components Group

UK . 886 parts In-Stock

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$5.778

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$5.200

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886

$5.778

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$5.200

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One Stop Electronics

USA . 1,105 parts In-Stock

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$8.000

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1,105

$8.000

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AZTECH Wire

Italy . 479 parts In-Stock

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$19.005

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479

$19.005

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Corphita

USA . 3,711 parts In-Stock

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Overview

Unlock the power of innovation with the TBP18SA46JP4 by Texas Instruments. Crafted with precision in a ceramic package, this OTP ROM device offers unmatched reliability and performance. Whether you're designing consumer electronics, automotive systems, or industrial equipment, this product delivers seamless operation and durability. With 512 words of memory organized in a 512x8 configuration, this technology is designed to exceed your expectations. Elevate your designs with Texas Instruments and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent durability and heat resistance, making this OTP ROM suitable for a wide range of operating conditions.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and placement within electronic devices.

No. of Terminals: 24

Having 24 terminals enables versatile connectivity options with other components in the circuit.

Maximum Operating Temperature: 70 °C

Being able to operate at up to 70°C ensures reliable performance even in high-temperature environments.

Organization: 512X8

Organized in 512 words with a width of 8, providing a decent memory capacity for storing data efficiently.

Technology: TTL

Using TTL technology ensures compatibility with a wide range of electronic devices and systems.

Memory Density: 4096 bit

With a memory density of 4096 bit, this OTP ROM can store a large amount of data in a compact form factor.

Maximum Access Time: 75 ns

Having a quick maximum access time of 75 nanoseconds ensures fast read and write operations, making this OTP ROM ideal for high-speed applications.

Technical Specifications

OTP ROM TBP18SA46JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18SA46JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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