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SN74S473N3

Texas Instruments

SN74S473N3 by Texas Instruments

SN74S473N3 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates in commercial temperature grade range of 0-70°C with a max access time of 75ns. This TTL technology chip, housed in a rectangular plastic/epoxy package, is ideal for applications requiring non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,141 parts In-Stock

1+ parts

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4,141

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Vyrian

USA . 3,563 parts In-Stock

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3,563

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,150 parts In-Stock

1+ parts

$4.858

100+ parts

-

1k+ parts

$5.380

10k+ parts

-

2,150

$4.858

-

$5.380

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DigiPath Technology Company

USA . 349 parts In-Stock

1+ parts

$5.349

100+ parts

$4.921

1k+ parts

-

10k+ parts

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349

$5.349

$4.921

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IDEA Electronic Components Group

UK . 2,013 parts In-Stock

1+ parts

$5.458

100+ parts

-

1k+ parts

$4.912

10k+ parts

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2,013

$5.458

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$4.912

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ChromeModa Solutions

Germany . 138 parts In-Stock

1+ parts

$5.458

100+ parts

$4.476

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-

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138

$5.458

$4.476

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AZTECH Wire

Italy . 367 parts In-Stock

1+ parts

$16.742

100+ parts

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367

$16.742

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One Stop Electronics

USA . 385 parts In-Stock

1+ parts

$20.000

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385

$20.000

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Corphita

USA . 1,143 parts In-Stock

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1,143

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Overview

Unlock the power of innovation with the Texas Instruments SN74S473N3 OTP ROM chip. Manufactured by a trusted industry leader, this versatile component offers reliability and quality like no other. Ideal for a wide range of applications, this product provides an efficient solution for storing essential data in electronic devices. Experience the value and benefits of seamless integration, increased performance, and enhanced functionality with the SN74S473N3. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package light in weight and durable, enhancing the overall portability and longevity of the product.

No. of Terminals: 20

Having 20 terminals allows for multiple connections, increasing the versatility and potential applications of the product.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand high temperature environments, making it reliable in various conditions.

Organization: 512X8

The organization of 512 words by 8 memory width provides a decent amount of storage capacity for data, suitable for many different applications.

Technology: TTL

The use of TTL technology ensures fast and reliable performance, making this product suitable for high-speed applications.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM offers sufficient storage capacity for data, making it a versatile option for various uses.

Technical Specifications

OTP ROM SN74S473N3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S473N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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