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SN74S2708N3

Texas Instruments

SN74S2708N3 by Texas Instruments

SN74S2708N3 by Texas Instruments is a 1KX8 OTP ROM with 8192-bit memory density. It operates at temperatures from 0°C to 70°C, with a max access time of 70ns. This TTL technology device has a package style of IN-LINE and is commonly used in commercial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,787 parts In-Stock

1+ parts

-

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8,787

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Digiode

USA . 1,995 parts In-Stock

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-

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1,995

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,161 parts In-Stock

1+ parts

$2.109

100+ parts

-

1k+ parts

$2.624

10k+ parts

-

2,161

$2.109

-

$2.624

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DigiPath Technology Company

USA . 1,484 parts In-Stock

1+ parts

$2.323

100+ parts

$2.137

1k+ parts

-

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1,484

$2.323

$2.137

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ChromeModa Solutions

Germany . 2,931 parts In-Stock

1+ parts

$2.370

100+ parts

$1.943

1k+ parts

-

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2,931

$2.370

$1.943

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IDEA Electronic Components Group

UK . 734 parts In-Stock

1+ parts

$2.370

100+ parts

-

1k+ parts

$2.133

10k+ parts

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734

$2.370

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$2.133

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AZTECH Wire

Italy . 568 parts In-Stock

1+ parts

$10.935

100+ parts

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568

$10.935

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One Stop Electronics

USA . 233 parts In-Stock

1+ parts

$14.000

100+ parts

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233

$14.000

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Corphita

USA . 4,427 parts In-Stock

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4,427

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Overview

Unlock the power of reliable memory storage with the SN74S2708N3 by Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled quality and performance for a wide range of applications. From industrial automation to consumer electronics, this versatile component is designed to meet your needs with ease. Count on Texas Instruments to deliver cutting-edge technology and exceptional value. Upgrade your project today with the SN74S2708N3 and experience the benefits firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ensuring longevity and portability.

No. of Terminals: 24

Having 24 terminals allows for easy connectivity and integration with other components or devices, making it versatile and suitable for various applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand high temperatures without compromising performance, making it reliable in different environments.

Organization: 1KX8

The 1KX8 organization allows for efficient storage and retrieval of data, optimizing the product's functionality and performance.

Technology: TTL

Being TTL technology-based ensures compatibility with a wide range of systems and devices, enhancing the product's versatility and usability.

Memory Density: 8192 bit

The high memory density of 8192 bits provides ample storage capacity for data, making the product suitable for applications that require large amounts of information to be stored and accessed.

Technical Specifications

OTP ROM SN74S2708N3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

OTP ROMs

Maximum Supply Current:

175 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S2708N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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