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JBP38S030MJ

Texas Instruments

JBP38S030MJ by Texas Instruments

JBP38S030MJ by Texas Instruments is a MILITARY-grade OTP ROM with 32x8 organization, 20ns access time, and operates at -55 to 125 °C. It has 16 terminals in an IN-LINE package style, suitable for applications requiring fast non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,714 parts In-Stock

1+ parts

-

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5,714

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Digiode

USA . 2,059 parts In-Stock

1+ parts

-

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1k+ parts

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2,059

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,421 parts In-Stock

1+ parts

$2.253

100+ parts

-

1k+ parts

$2.755

10k+ parts

-

1,421

$2.253

-

$2.755

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DigiPath Technology Company

USA . 2,186 parts In-Stock

1+ parts

$2.481

100+ parts

$2.283

1k+ parts

-

10k+ parts

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2,186

$2.481

$2.283

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IDEA Electronic Components Group

UK . 1,190 parts In-Stock

1+ parts

$2.532

100+ parts

-

1k+ parts

$2.279

10k+ parts

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1,190

$2.532

-

$2.279

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ChromeModa Solutions

Germany . 1,070 parts In-Stock

1+ parts

$2.532

100+ parts

$2.076

1k+ parts

-

10k+ parts

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1,070

$2.532

$2.076

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AZTECH Wire

Italy . 717 parts In-Stock

1+ parts

$8.406

100+ parts

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717

$8.406

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One Stop Electronics

USA . 771 parts In-Stock

1+ parts

$18.000

100+ parts

-

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771

$18.000

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Corphita

USA . 1,453 parts In-Stock

1+ parts

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1,453

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Overview

Enhance your electronic designs with the JBP38S030MJ by Texas Instruments. Known for their superior quality and reliability, Texas Instruments provides top-notch OTP ROM products like this one. Ideal for military-grade applications, this product offers unmatched value with its fast access time and wide memory width. Stay ahead of the competition and choose Texas Instruments for all your memory IC needs.

Feature Benefit Bullets

Package Body Material: CERAMIC

Provides durability and protection for the internal components, ensuring a longer lifespan for the OTP ROM.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, making it easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for use in various environments and applications.

Organization: 32X8

Offers a good balance of memory capacity and data width, suitable for many data storage and retrieval needs.

Technology: TTL

Utilizes TTL technology, known for its reliability and compatibility with a wide range of systems.

Memory IC Type: OTP ROM

Being OTP (One-Time Programmable) ROM, it provides secure data storage without the risk of accidental erasure or modification.

Maximum Access Time: 20 ns

Provides fast access to stored data, making it ideal for applications requiring quick response times.

Technical Specifications

OTP ROM JBP38S030MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

20 ns

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP38S030MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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