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5962-01-214-2160

Texas Instruments

5962-01-214-2160 by Texas Instruments

Texas Instruments' 5962-01-214-2160 is a MILITARY-grade OTP ROM with 512x8 organization, 4096-bit memory density, and 85ns max access time. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,090 parts In-Stock

1+ parts

-

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9,090

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Digiode

USA . 3,759 parts In-Stock

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3,759

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Distributors (Availability)

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Native Components

USA . 556 parts In-Stock

1+ parts

$0.332

100+ parts

-

1k+ parts

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10k+ parts

$0.319

556

$0.332

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-

$0.319

Northwest PG Solutions

USA . 2,374 parts In-Stock

1+ parts

$0.365

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-

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$0.322

2,374

$0.365

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$0.322

Parana Technologies

USA . 1,591 parts In-Stock

1+ parts

$3.846

100+ parts

-

1k+ parts

$4.332

10k+ parts

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1,591

$3.846

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$4.332

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ChromeModa Solutions

Germany . 3,243 parts In-Stock

1+ parts

$4.321

100+ parts

$3.543

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3,243

$4.321

$3.543

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IDEA Electronic Components Group

UK . 1,723 parts In-Stock

1+ parts

$4.321

100+ parts

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1k+ parts

$3.889

10k+ parts

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1,723

$4.321

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$3.889

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AZTECH Wire

Italy . 646 parts In-Stock

1+ parts

$7.059

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646

$7.059

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One Stop Electronics

USA . 835 parts In-Stock

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$26.000

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835

$26.000

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DigiPath Technology Company

USA . 2,065 parts In-Stock

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$3.896

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2,065

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$3.896

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Corphita

USA . 884 parts In-Stock

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884

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the 5962-01-214-2160 OTP ROM. Designed for military-grade applications, this ceramic package offers superior performance in extreme temperatures. With a memory density of 4096 bits and an access time of just 85ns, this product is perfect for high-speed data storage needs. Trust Texas Instruments for cutting-edge technology and exceptional value, providing you with the peace of mind that your critical systems are in safe hands. Elevate your project with the 5962-01-214-2160 today!

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent thermal resistance and durability, making the product suitable for rugged environments.

Screening Level: MIL-STD-883 Class B (Modified)

The modified MIL-STD-883 Class B screening level ensures high reliability and quality of the product, making it ideal for critical applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V allows for compatibility with a wide range of systems and power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand harsh environmental conditions without compromising performance.

Organization: 512X8

The 512x8 organization provides a good balance between storage capacity and access speed, making it suitable for various applications.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data processing, making the product efficient for use in high-speed communication systems.

Memory IC Type: OTP ROM

Being an OTP ROM memory IC type means that the data programmed into the memory is non-volatile, ensuring data retention even when power is removed.

Maximum Access Time: 85 ns

With a maximum access time of 85 nanoseconds, this product offers quick data retrieval, enhancing overall system performance.

Technical Specifications

OTP ROM 5962-01-214-2160 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-214-2160 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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