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TBP18S46N3

Texas Instruments

TBP18S46N3 by Texas Instruments

TBP18S46N3 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates at a nominal voltage of 5V and has a max access time of 75ns. This device, suitable for commercial applications, features a rectangular package style with 24 terminals in an in-line configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,305 parts In-Stock

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Digiode

USA . 2,834 parts In-Stock

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2,834

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Distributors (Availability)

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Parana Technologies

USA . 1,864 parts In-Stock

1+ parts

$4.252

100+ parts

-

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$4.684

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1,864

$4.252

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$4.684

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DigiPath Technology Company

USA . 355 parts In-Stock

1+ parts

$4.681

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355

$4.681

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ChromeModa Solutions

Germany . 4,723 parts In-Stock

1+ parts

$4.777

100+ parts

$3.917

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4,723

$4.777

$3.917

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IDEA Electronic Components Group

UK . 839 parts In-Stock

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$4.777

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$4.299

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839

$4.777

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$4.299

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AZTECH Wire

Italy . 879 parts In-Stock

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$9.295

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879

$9.295

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One Stop Electronics

USA . 760 parts In-Stock

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$27.000

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760

$27.000

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Corphita

USA . 76 parts In-Stock

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Overview

Discover the cutting-edge TBP18S46N3 by Texas Instruments, a high-quality OTP ROM with a 512x8 organization. With a commercial temperature grade and maximum supply current of 155mA, this memory IC offers reliable performance in various applications. Texas Instruments' reputation for excellence ensures that this product delivers unmatched value and benefits to customers. Ideal for industries requiring fast access times and robust memory solutions, the TBP18S46N3 is a top choice for demanding projects. Trust Texas Instruments for exceptional quality and performance in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy are durable materials, ensuring the product is robust and long-lasting.

Nominal Supply Voltage / Vsup (V): 5

A standard supply voltage of 5V makes it compatible with most systems and easy to integrate.

No. of Terminals: 24

Having 24 terminals allows for versatile connections and compatibility with various setups.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this product can withstand elevated temperatures without compromising performance.

Organization: 512X8

The 512x8 organization provides a good balance between capacity and speed, making it suitable for a wide range of applications.

Technology: TTL

TTL technology ensures reliable and fast data transfers, making this product efficient and dependable.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM can store a large amount of data efficiently.

Maximum Access Time: 75 ns

A fast maximum access time of 75 ns ensures quick retrieval of data, enhancing overall performance.

Technical Specifications

OTP ROM TBP18S46N3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18S46N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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