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TBP24SA10J

Texas Instruments

TBP24SA10J by Texas Instruments

TBP24SA10J by Texas Instruments is a 256x4 OTP ROM with 1024-bit memory density. Operating at 5V, it has a max access time of 65ns and operates in parallel mode. Ideal for commercial applications requiring fast and reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,586 parts In-Stock

1+ parts

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7,586

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Digiode

USA . 2,078 parts In-Stock

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2,078

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Bristol Electronics

USA . 150 parts In-Stock

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150

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Sogenti Electronics

Canada . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,023 parts In-Stock

1+ parts

$4.751

100+ parts

-

1k+ parts

$5.254

10k+ parts

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2,023

$4.751

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$5.254

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DigiPath Technology Company

USA . 19 parts In-Stock

1+ parts

$5.231

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19

$5.231

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IDEA Electronic Components Group

UK . 2,301 parts In-Stock

1+ parts

$5.338

100+ parts

-

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$4.804

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2,301

$5.338

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$4.804

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ChromeModa Solutions

Germany . 717 parts In-Stock

1+ parts

$5.338

100+ parts

$4.377

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717

$5.338

$4.377

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AZTECH Wire

Italy . 215 parts In-Stock

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$13.041

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215

$13.041

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One Stop Electronics

USA . 181 parts In-Stock

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$26.000

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181

$26.000

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Corphita

USA . 191 parts In-Stock

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191

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Assy Fe

Spain . 9 parts In-Stock

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Overview

Unlock endless possibilities with the TBP24SA10J by Texas Instruments, a cutting-edge OTP ROM memory IC that combines quality craftsmanship with unparalleled performance. Manufactured by industry leader Texas Instruments, this versatile device offers exceptional reliability and efficiency for a wide range of applications. Whether you're designing consumer electronics or industrial machinery, the TBP24SA10J delivers unmatched value, benefits, and advantages to elevate your projects to new heights. Experience innovation at its finest with Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and protection to the OTP ROM, making it suitable for various environments and ensuring reliability.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and efficient communication between the OTP ROM and other components in a system.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power supplies and makes integration into existing systems easier.

Organization: 256X4

The 256X4 organization offers a good balance between memory capacity and data width, providing sufficient storage for data while maintaining efficient data retrieval.

Technology: BIPOLAR

The bipolar technology used in the OTP ROM enhances memory performance and reliability, making it a robust choice for applications where consistent data storage and retrieval are key.

Memory Density: 1024 bit

With a memory density of 1024 bits, this OTP ROM offers sufficient storage capacity for storing important data in a secure and non-volatile manner.

Technical Specifications

OTP ROM TBP24SA10J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

65 ns

JESD-30 Code:

R-GDIP-T16

Length:

19.56 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X4

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP24SA10J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-165-3112, 5962011653112

NIIN

011653112

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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