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5962-8769001RX

Texas Instruments

5962-8769001RX by Texas Instruments

Texas Instruments' 5962-8769001RX is a MILITARY-grade OTP ROM with 512X8 organization, 4096 bit memory density, and 70 ns max access time. It operates in ASYNCHRONOUS mode at temperatures ranging from -55 to 125 °C, making it ideal for military applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,378 parts In-Stock

1+ parts

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7,378

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Digiode

USA . 2,498 parts In-Stock

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2,498

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Resion

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 906 parts In-Stock

1+ parts

$0.300

100+ parts

-

1k+ parts

-

10k+ parts

$0.288

906

$0.300

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$0.288

Northwest PG Solutions

USA . 1,309 parts In-Stock

1+ parts

$0.330

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-

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$0.291

1,309

$0.330

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$0.291

Semicontronic

India . 1,400 parts In-Stock

1+ parts

$4.000

100+ parts

$3.900

1k+ parts

$3.880

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-

1,400

$4.000

$3.900

$3.880

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Parana Technologies

USA . 277 parts In-Stock

1+ parts

$5.111

100+ parts

-

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$5.699

10k+ parts

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277

$5.111

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$5.699

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DigiPath Technology Company

USA . 1,259 parts In-Stock

1+ parts

$5.628

100+ parts

$5.178

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1,259

$5.628

$5.178

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ChromeModa Solutions

Germany . 5,647 parts In-Stock

1+ parts

$5.743

100+ parts

$4.709

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5,647

$5.743

$4.709

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IDEA Electronic Components Group

UK . 1,466 parts In-Stock

1+ parts

$5.743

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$5.169

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1,466

$5.743

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$5.169

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One Stop Electronics

USA . 1,584 parts In-Stock

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$8.000

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1,584

$8.000

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AZTECH Wire

Italy . 547 parts In-Stock

1+ parts

$19.735

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547

$19.735

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Corphita

USA . 2,128 parts In-Stock

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Overview

Experience unparalleled quality with the 5962-8769001RX by Texas Instruments, a leading manufacturer in the field of OTP ROM. This versatile product offers reliable performance in a wide range of applications, thanks to its MIL-STD-883 screening level and military-grade temperature grade. With a memory density of 4096 bits and a fast access time of 70ns, this OTP ROM provides exceptional value and benefits for your projects. Trust Texas Instruments for superior technology and innovation that delivers results.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection, making the OTP ROM suitable for a variety of environments.

Screening Level: MIL-STD-883

The product has undergone rigorous testing to ensure reliability and quality, meeting military standards.

Operating Mode: ASYNCHRONOUS

Allows for independent operation and access to data, providing flexibility and efficiency in processing information.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage level ensures compatibility with a wide range of systems and devices.

Memory Density: 4096 bit

With a high memory density, the OTP ROM can store a large amount of data efficiently.

Technical Specifications

OTP ROM 5962-8769001RX attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-GDIP-T20

Length:

24.257 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Screening Level:

MIL-STD-883

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

5962-8769001RX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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