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TBP28L45JP4

Texas Instruments

TBP28L45JP4 by Texas Instruments

TBP28L45JP4 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density and 60ns max access time. It operates at a nominal voltage of 5V, suitable for commercial temperature grades. This rectangular ceramic package with 24 terminals is ideal for applications requiring reliable non-volatile memory storage in TTL technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,895 parts In-Stock

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6,895

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Digiode

USA . 947 parts In-Stock

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947

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,107 parts In-Stock

1+ parts

$4.313

100+ parts

-

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$4.736

10k+ parts

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2,107

$4.313

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$4.736

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ChromeModa Solutions

Germany . 801 parts In-Stock

1+ parts

$4.846

100+ parts

$3.974

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801

$4.846

$3.974

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IDEA Electronic Components Group

UK . 339 parts In-Stock

1+ parts

$4.846

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$4.361

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339

$4.846

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$4.361

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AZTECH Wire

Italy . 785 parts In-Stock

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$7.748

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785

$7.748

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One Stop Electronics

USA . 503 parts In-Stock

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$23.000

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503

$23.000

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DigiPath Technology Company

USA . 1,509 parts In-Stock

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$4.369

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1,509

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$4.369

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Corphita

USA . 869 parts In-Stock

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869

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Overview

The Texas Instruments TBP28L45JP4 OTP ROM offers unmatched quality and reliability, backed by the reputable manufacturer's commitment to excellence. This versatile product is ideal for a wide range of applications, providing customers with value and performance that exceeds expectations. With a high memory density and fast access time, this OTP ROM ensures seamless operation in commercial-grade environments. Trust Texas Instruments to deliver innovative solutions that drive your success.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent durability and heat dissipation, making this OTP ROM chip suitable for applications where reliability and temperature resistance are important.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, ensuring compatibility with many existing systems and ease of integration.

No. of Terminals: 24

Provides a sufficient number of terminals for connectivity options and versatility in circuit designs.

Organization: 512X8

Offers a logical organization of memory cells in a 512x8 configuration, providing efficient storage and retrieval of data.

Technology: TTL

Utilizes TTL technology, known for its simplicity and reliability, making this OTP ROM chip easy to interface with other TTL components.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM chip has ample storage capacity for various data storage needs.

Technical Specifications

OTP ROM TBP28L45JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP28L45JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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