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SN74S470NP1

Texas Instruments

SN74S470NP1 by Texas Instruments

SN74S470NP1 by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 70ns and operates in commercial temperature grades. This rectangular package with 20 terminals is ideal for applications requiring TTL technology and through-hole terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,392 parts In-Stock

1+ parts

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2,392

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Digiode

USA . 419 parts In-Stock

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419

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,132 parts In-Stock

1+ parts

$2.937

100+ parts

-

1k+ parts

$3.437

10k+ parts

-

2,132

$2.937

-

$3.437

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DigiPath Technology Company

USA . 1,757 parts In-Stock

1+ parts

$3.234

100+ parts

$2.975

1k+ parts

-

10k+ parts

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1,757

$3.234

$2.975

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ChromeModa Solutions

Germany . 1,867 parts In-Stock

1+ parts

$3.300

100+ parts

$2.706

1k+ parts

-

10k+ parts

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1,867

$3.300

$2.706

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IDEA Electronic Components Group

UK . 384 parts In-Stock

1+ parts

$3.300

100+ parts

-

1k+ parts

$2.970

10k+ parts

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384

$3.300

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$2.970

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AZTECH Wire

Italy . 296 parts In-Stock

1+ parts

$8.371

100+ parts

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296

$8.371

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One Stop Electronics

USA . 400 parts In-Stock

1+ parts

$12.000

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400

$12.000

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Corphita

USA . 3,194 parts In-Stock

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3,194

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Overview

Discover the innovative SN74S470NP1 by Texas Instruments, a cutting-edge OTP ROM that offers unparalleled quality and reliability. With Texas Instruments' renowned reputation for excellence in semiconductor manufacturing, this product delivers superior performance and durability. Ideal for a wide range of applications, this OTP ROM provides customers with the value and benefits they need, from enhanced data security to efficient memory storage. Trust Texas Instruments for top-of-the-line technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection to the internal components of the OTP ROM, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power supplies, making it easy to integrate this OTP ROM into existing systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can withstand high temperature environments, ensuring reliable performance even in challenging conditions.

Organization: 256X8

The 256X8 organization provides a total of 256 words with a width of 8, offering sufficient memory capacity for storing data in various applications.

Terminal Position: DUAL

The dual terminal position makes it easy to connect and interface the OTP ROM with other components, simplifying the installation process and ensuring a secure connection.

Technology: TTL

Utilizing TTL technology, this OTP ROM offers high-speed performance and low power consumption, making it an efficient and reliable choice for data storage applications.

Technical Specifications

OTP ROM SN74S470NP1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S470NP1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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