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TBP28L86N1

Texas Instruments

TBP28L86N1 by Texas Instruments

TBP28L86N1 by Texas Instruments is a 1KX8 OTP ROM with 8192 bit memory density and 130 ns max access time. It operates at a nominal voltage of 5V, suitable for commercial temperature grade applications. The package style is in-line rectangular with 24 terminals in dual position through-hole form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,580 parts In-Stock

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4,580

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Vyrian

USA . 3,844 parts In-Stock

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3,844

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 952 parts In-Stock

1+ parts

$1.995

100+ parts

-

1k+ parts

$2.524

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952

$1.995

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$2.524

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DigiPath Technology Company

USA . 2,017 parts In-Stock

1+ parts

$2.197

100+ parts

$2.021

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2,017

$2.197

$2.021

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ChromeModa Solutions

Germany . 4,000 parts In-Stock

1+ parts

$2.242

100+ parts

$1.838

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4,000

$2.242

$1.838

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IDEA Electronic Components Group

UK . 282 parts In-Stock

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$2.242

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$2.018

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282

$2.242

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$2.018

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AZTECH Wire

Italy . 630 parts In-Stock

1+ parts

$11.854

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630

$11.854

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One Stop Electronics

USA . 354 parts In-Stock

1+ parts

$25.000

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354

$25.000

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Corphita

USA . 193 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TBP28L86N1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality OTP ROM products that are essential for a wide range of applications. With its durable plastic/epoxy package body and user-friendly rectangular shape, this product is designed to provide seamless integration into your projects. Experience the benefits of a 1KX8 organization, 1024 words, and 8192 bit memory density, all at a nominal supply voltage of 5V. Trust Texas Instruments to deliver unmatched performance and value with the TBP28L86N1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for various applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures compatibility with common electrical systems, making integration easier.

No. of Terminals: 24

Having 24 terminals provides flexibility in connectivity options and enables the product to interface with multiple components.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance in various environments.

Organization: 1KX8

The 1KX8 organization allows for efficient data storage and retrieval, making the product suitable for memory-intensive applications.

Technology: TTL

The TTL technology provides fast and reliable operation, making the product ideal for high-speed data processing tasks.

Memory Width: 8

The memory width of 8 bits allows for storing and accessing data in byte-sized chunks, enhancing overall efficiency.

No. of Words: 1024 words

The ample storage capacity of 1024 words enables the product to store a significant amount of data for various applications.

Memory Density: 8192 bit

With a memory density of 8192 bits, the product offers ample storage space for storing and accessing data efficiently.

Maximum Access Time: 130 ns

The fast maximum access time of 130 ns ensures quick retrieval of data, making the product suitable for time-sensitive applications.

Technical Specifications

OTP ROM TBP28L86N1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

130 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP28L86N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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