Loading...

TBP28L46NW

Texas Instruments

TBP28L46NW by Texas Instruments

TBP28L46NW by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has an access time of 95ns and consumes up to 85mA. Ideal for commercial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,844 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,844

-

-

-

-

Vyrian

USA . 3,097 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,097

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,172 parts In-Stock

1+ parts

$5.118

100+ parts

-

1k+ parts

$5.706

10k+ parts

-

2,172

$5.118

-

$5.706

-

DigiPath Technology Company

USA . 520 parts In-Stock

1+ parts

$5.635

100+ parts

$5.184

1k+ parts

-

10k+ parts

-

520

$5.635

$5.184

-

-

ChromeModa Solutions

Germany . 6,546 parts In-Stock

1+ parts

$5.750

100+ parts

$4.715

1k+ parts

-

10k+ parts

-

6,546

$5.750

$4.715

-

-

IDEA Electronic Components Group

UK . 253 parts In-Stock

1+ parts

$5.750

100+ parts

-

1k+ parts

$5.175

10k+ parts

-

253

$5.750

-

$5.175

-

AZTECH Wire

Italy . 250 parts In-Stock

1+ parts

$15.829

100+ parts

-

1k+ parts

-

10k+ parts

-

250

$15.829

-

-

-

One Stop Electronics

USA . 371 parts In-Stock

1+ parts

$25.000

100+ parts

-

1k+ parts

-

10k+ parts

-

371

$25.000

-

-

-

Corphita

USA . 1,504 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,504

-

-

-

-

Overview

Experience top-of-the-line quality with the TBP28L46NW by Texas Instruments, a leading manufacturer in the industry. This OTP ROM device offers unparalleled reliability and performance for a wide range of applications. With its advanced technology and high memory density, customers can expect seamless operation and fast access times. Trust Texas Instruments to deliver exceptional value and benefits with the TBP28L46NW, making it the ideal choice for your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in timing and communication, making it suitable for a wide range of systems.

Nominal Supply Voltage / Vsup (V): 5

Having a stable supply voltage of 5V ensures reliable performance and compatibility with standard power sources.

No. of Terminals: 24

Having 24 terminals provides ample connectivity options and flexibility in integration within a system.

Maximum Operating Temperature: 70 °C

The product can operate efficiently at high temperatures, making it suitable for industrial and harsh environments.

Memory Density: 4096 bit

With a high memory density, the product can store a large amount of data efficiently, making it ideal for storage-intensive applications.

Maximum Access Time: 95 ns

The fast access time ensures quick retrieval of data, improving overall system performance.

Technical Specifications

OTP ROM TBP28L46NW attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

95 ns

JESD-30 Code:

R-PDIP-T24

Length:

31.75 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Current:

85 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TBP28L46NW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 20