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TBP24SA81-55J4

Texas Instruments

TBP24SA81-55J4 by Texas Instruments

TBP24SA81-55J4 by Texas Instruments is a 2KX4 OTP ROM with 8192-bit memory density and 55 ns max access time. It features TTL technology, operates b/w 0 to 70°C, and has an IN-LINE package style. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,400 parts In-Stock

1+ parts

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8,400

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Digiode

USA . 2,197 parts In-Stock

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2,197

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,692 parts In-Stock

1+ parts

$4.940

100+ parts

-

1k+ parts

$5.476

10k+ parts

-

1,692

$4.940

-

$5.476

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ChromeModa Solutions

Germany . 1,386 parts In-Stock

1+ parts

$5.550

100+ parts

$4.551

1k+ parts

-

10k+ parts

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1,386

$5.550

$4.551

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IDEA Electronic Components Group

UK . 160 parts In-Stock

1+ parts

$5.550

100+ parts

-

1k+ parts

$4.995

10k+ parts

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160

$5.550

-

$4.995

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One Stop Electronics

USA . 1,584 parts In-Stock

1+ parts

$6.000

100+ parts

-

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1,584

$6.000

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AZTECH Wire

Italy . 603 parts In-Stock

1+ parts

$10.580

100+ parts

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603

$10.580

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DigiPath Technology Company

USA . 2,083 parts In-Stock

1+ parts

-

100+ parts

$5.004

1k+ parts

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2,083

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$5.004

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Corphita

USA . 1,108 parts In-Stock

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1,108

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Overview

Unlock the power of reliable data storage with the TBP24SA81-55J4 by Texas Instruments. Crafted with precision using high-quality ceramic materials, this OTP ROM offers unparalleled durability and performance. Ideal for a wide range of applications, this versatile device is designed to meet your unique needs with ease. Trust in Texas Instruments' reputation for excellence and innovation as you explore the endless possibilities that the TBP24SA81-55J4 has to offer. Experience the value, benefits, and advantages of this cutting-edge technology firsthand and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent heat resistance and durability, ensuring reliable performance in various operating conditions.

No. of Terminals: 18

Sufficient number of terminals for connecting the device to other components or systems, allowing for versatile integration.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance enables this OTP ROM to function optimally in a wide range of environments.

Organization: 2KX4

Organized as 2KX4, this OTP ROM offers a good balance between memory capacity and data retrieval efficiency.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transfer, making this OTP ROM suitable for applications requiring high-speed performance.

Memory Density: 8192 bit

With a memory density of 8192 bits, this OTP ROM can store a significant amount of data efficiently.

Technical Specifications

OTP ROM TBP24SA81-55J4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-XDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24SA81-55J4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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