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CBP18S46MJ

Texas Instruments

CBP18S46MJ by Texas Instruments

CBP18S46MJ by Texas Instruments is a MIL-STD-883 Class B OTP ROM with 512x8 organization, 4096-bit memory density, and 85ns max access time. Ideal for military applications due to its MILITARY temperature grade and ceramic package body material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,384 parts In-Stock

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5,384

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Digiode

USA . 2,318 parts In-Stock

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2,318

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Distributors (Availability)

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Native Components

USA . 167 parts In-Stock

1+ parts

$1.648

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167

$1.648

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Northwest PG Solutions

USA . 450 parts In-Stock

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$1.813

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450

$1.813

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One Stop Electronics

USA . 249 parts In-Stock

1+ parts

$4.000

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249

$4.000

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Parana Technologies

USA . 1,174 parts In-Stock

1+ parts

$4.278

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$4.707

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1,174

$4.278

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$4.707

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DigiPath Technology Company

USA . 1,138 parts In-Stock

1+ parts

$4.711

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1,138

$4.711

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ChromeModa Solutions

Germany . 6,167 parts In-Stock

1+ parts

$4.807

100+ parts

$3.942

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6,167

$4.807

$3.942

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IDEA Electronic Components Group

UK . 1,163 parts In-Stock

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$4.807

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$4.326

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1,163

$4.807

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$4.326

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AZTECH Wire

Italy . 654 parts In-Stock

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$17.278

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654

$17.278

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Corphita

USA . 3,086 parts In-Stock

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3,086

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Overview

Elevate your projects with the CBP18S46MJ by Texas Instruments, a top-of-the-line OTP ROM that sets the standard for quality and performance. With a MIL-STD-883 Class B (Modified) screening level and military-grade temperature grade, this product ensures reliability and durability in any application. From aerospace to defense, this 512X8 memory IC offers unmatched value and benefits, making it the perfect choice for customers seeking top-notch technology. Choose Texas Instruments for cutting-edge solutions that deliver results.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent heat dissipation and durability, making the product suitable for high temperature environments.

Screening Level: MIL-STD-883 Class B (Modified)

Compliance with MIL-STD-883 Class B standards ensures high reliability and quality of the product.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes integration and compatibility with other systems easy.

Organization: 512X8

The 512X8 organization allows for efficient data storage and retrieval, making the product suitable for various applications.

Temperature Grade: MILITARY

Military-grade temperature specifications ensure reliability and performance in harsh environmental conditions.

Technology: TTL

TTL technology offers high speed data processing and low power consumption, making the product efficient and reliable.

Memory IC Type: OTP ROM

Being a One-Time Programmable Read-Only Memory, the product offers secure and reliable data storage and retrieval.

Technical Specifications

OTP ROM CBP18S46MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

CBP18S46MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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