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TBP24SA10NP1

Texas Instruments

TBP24SA10NP1 by Texas Instruments

TBP24SA10NP1 by Texas Instruments is a 256x4 OTP ROM with 1024-bit memory density. It operates at 5V, has a max access time of 70ns, and consumes up to 100mA. This rectangular package with 16 terminals in an in-line style is ideal for commercial applications requiring non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,164 parts In-Stock

1+ parts

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4,164

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Digiode

USA . 2,335 parts In-Stock

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2,335

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,668 parts In-Stock

1+ parts

$2.569

100+ parts

-

1k+ parts

$3.057

10k+ parts

-

1,668

$2.569

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$3.057

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DigiPath Technology Company

USA . 511 parts In-Stock

1+ parts

$2.828

100+ parts

$2.602

1k+ parts

-

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511

$2.828

$2.602

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IDEA Electronic Components Group

UK . 1,716 parts In-Stock

1+ parts

$2.886

100+ parts

-

1k+ parts

$2.597

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1,716

$2.886

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$2.597

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ChromeModa Solutions

Germany . 1,561 parts In-Stock

1+ parts

$2.886

100+ parts

$2.367

1k+ parts

-

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1,561

$2.886

$2.367

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One Stop Electronics

USA . 379 parts In-Stock

1+ parts

$16.000

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379

$16.000

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AZTECH Wire

Italy . 513 parts In-Stock

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$19.260

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513

$19.260

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Corphita

USA . 4,028 parts In-Stock

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4,028

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Overview

Unlock the power of reliable data storage with the TBP24SA10NP1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality OTP ROM products that are essential for a wide range of applications. With a nominal supply voltage of 5V and a memory density of 1024 bits, this product offers customers unparalleled value and benefits. Whether you're designing consumer electronics or industrial automation systems, the TBP24SA10NP1 provides fast access times and high performance to meet your needs. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the OTP ROM, ensuring long-term reliability.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with common power supplies, making it easy to integrate into existing systems.

No. of Terminals: 16

Having 16 terminals allows for versatile connectivity options, making it suitable for a variety of applications.

Package Style (Meter): IN-LINE

The in-line package style makes the OTP ROM easy to incorporate into circuits and systems, optimizing space usage.

Organization: 256X4

The 256X4 organization means the OTP ROM has a total of 256 words with a memory width of 4, providing a good balance between storage capacity and data processing.

Technology: TTL

Utilizing TTL technology ensures fast and efficient operation, making the OTP ROM a reliable choice for high-speed applications.

Memory IC Type: OTP ROM

Being an OTP ROM (One-Time Programmable Read-Only Memory) means the memory is permanently programmed during manufacturing, making it ideal for applications where data security and reliability are critical.

Maximum Access Time: 70 ns

The maximum access time of 70 ns ensures quick retrieval of data, making the OTP ROM suitable for time-sensitive operations.

Technical Specifications

OTP ROM TBP24SA10NP1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T16

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

100 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24SA10NP1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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