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TBP18SA42N1

Texas Instruments

TBP18SA42N1 by Texas Instruments

TBP18SA42N1 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates b/w 0°C to 70°C, with a max access time of 75ns. Ideal for commercial applications requiring reliable non-volatile memory storage in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,497 parts In-Stock

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4,497

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Digiode

USA . 4,394 parts In-Stock

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4,394

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 29 parts In-Stock

1+ parts

$2.296

100+ parts

-

1k+ parts

$2.796

10k+ parts

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29

$2.296

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$2.796

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DigiPath Technology Company

USA . 438 parts In-Stock

1+ parts

$2.528

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-

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438

$2.528

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IDEA Electronic Components Group

UK . 711 parts In-Stock

1+ parts

$2.580

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$2.322

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711

$2.580

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$2.322

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ChromeModa Solutions

Germany . 61 parts In-Stock

1+ parts

$2.580

100+ parts

$2.116

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61

$2.580

$2.116

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One Stop Electronics

USA . 614 parts In-Stock

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$3.000

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614

$3.000

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AZTECH Wire

Italy . 504 parts In-Stock

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$18.271

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504

$18.271

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Corphita

USA . 4,109 parts In-Stock

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Overview

Discover the reliability and innovation of Texas Instruments with the TBP18SA42N1 OTP ROM. This versatile memory device offers unmatched quality and performance, making it ideal for a wide range of applications. From consumer electronics to industrial automation, this product delivers value by providing fast access times and high memory density. Trust Texas Instruments to meet your memory needs with cutting-edge technology and superior craftsmanship.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures a lightweight yet durable construction, making the product suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures easy integration into various electronic devices and systems.

No. of Terminals: 20

Having 20 terminals provides flexibility in connecting the OTP ROM to other components and devices, allowing for versatile usage.

Package Style (Meter): IN-LINE

The in-line package style enables easy installation and space-saving design for efficient use in compact electronic systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can withstand normal operating conditions without overheating.

Organization: 512X8

The 512X8 organization means the OTP ROM has a capacity to store 512 words with 8 bits each, providing sufficient memory for data storage and retrieval.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable performance even in cold environments.

Terminal Position: DUAL

The dual terminal position allows for more secure connections and better stability in the overall system.

Technology: TTL

Using TTL technology ensures compatibility with a wide range of devices and systems, making it a versatile choice for various applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easy to solder and connect the OTP ROM securely in place.

No. of Words: 512 words

With a capacity of 512 words, this OTP ROM can store a significant amount of data for processing and retrieval.

Memory Width: 8

The memory width of 8 bits allows for processing and storage of data in byte-sized chunks, enabling efficient data handling.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch provides standardized spacing for easy integration and compatibility with various electronic components.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM offers ample storage space for data storage and retrieval needs.

Memory IC Type: OTP ROM

Being an OTP ROM ensures that the data stored in the memory is secure and cannot be easily altered or overwritten, making it suitable for critical applications.

Maximum Access Time: 75 ns

The maximum access time of 75 nanoseconds ensures fast data retrieval and processing, making the OTP ROM suitable for applications requiring quick response times.

Technical Specifications

OTP ROM TBP18SA42N1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18SA42N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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