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TBP28L86NP3

Texas Instruments

TBP28L86NP3 by Texas Instruments

TBP28L86NP3 by Texas Instruments is a 1KX8 OTP ROM with 8192-bit memory density and 130 ns max access time. It operates at a nominal voltage of 5V and has a temperature range of 0 to 70°C. This device, in an IN-LINE package style, is ideal for applications requiring non-volatile memory storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,893 parts In-Stock

1+ parts

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5,893

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Digiode

USA . 758 parts In-Stock

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758

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,856 parts In-Stock

1+ parts

$3.135

100+ parts

-

1k+ parts

$3.657

10k+ parts

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1,856

$3.135

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$3.657

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DigiPath Technology Company

USA . 1,619 parts In-Stock

1+ parts

$3.453

100+ parts

$3.176

1k+ parts

-

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1,619

$3.453

$3.176

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ChromeModa Solutions

Germany . 6,298 parts In-Stock

1+ parts

$3.523

100+ parts

$2.889

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-

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6,298

$3.523

$2.889

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IDEA Electronic Components Group

UK . 694 parts In-Stock

1+ parts

$3.523

100+ parts

-

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$3.171

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694

$3.523

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$3.171

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AZTECH Wire

Italy . 697 parts In-Stock

1+ parts

$10.778

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697

$10.778

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One Stop Electronics

USA . 1,480 parts In-Stock

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$18.000

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1,480

$18.000

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Corphita

USA . 3,122 parts In-Stock

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Overview

Unlock the power of reliable memory storage with the TBP28L86NP3 by Texas Instruments. As a trusted manufacturer, Texas Instruments has crafted this OTP ROM to provide seamless data storage solutions for a variety of applications. With a package style that is both durable and convenient, this product offers customers the value of high performance at an affordable price. Whether you need to store critical information for industrial automation or consumer electronics, the TBP28L86NP3 delivers the quality and reliability that Texas Instruments is known for. Trust in this innovative technology to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and thermal stability to the OTP ROM, making it suitable for a wide range of operating conditions.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate the OTP ROM into existing systems.

No. of Terminals: 24

Having a high number of terminals allows for versatile connectivity options, enabling the OTP ROM to interface with various other components effectively.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance even in elevated temperature environments, making it suitable for industrial applications.

Memory Width: 8

The memory width of 8 bits provides a good balance between storage capacity and access speed, making the OTP ROM suitable for a wide range of applications.

Technology: TTL

The use of TTL technology ensures fast and reliable data transfer, making the OTP ROM ideal for applications where speed is critical.

Memory Density: 8192 bit

The high memory density of 8192 bits allows the OTP ROM to store a significant amount of data in a compact form factor, making it efficient in terms of space utilization.

Maximum Access Time: 130 ns

The maximum access time of 130 nanoseconds ensures quick retrieval of data, making the OTP ROM suitable for applications where low latency is essential.

Technical Specifications

OTP ROM TBP28L86NP3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

130 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP28L86NP3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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