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5962-01-083-3924

Texas Instruments

5962-01-083-3924 by Texas Instruments

Texas Instruments' 5962-01-083-3924 is a MILITARY-grade OTP ROM with 512X8 organization, 4096 bit memory density, and 85 ns max access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for military applications requiring fast, reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,777 parts In-Stock

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Digiode

USA . 4,692 parts In-Stock

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4,692

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Distributors (Availability)

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Parana Technologies

USA . 2,098 parts In-Stock

1+ parts

$4.436

100+ parts

-

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$4.862

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2,098

$4.436

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$4.862

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DigiPath Technology Company

USA . 2,185 parts In-Stock

1+ parts

$4.884

100+ parts

$4.494

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2,185

$4.884

$4.494

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ChromeModa Solutions

Germany . 5,369 parts In-Stock

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$4.984

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$4.087

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5,369

$4.984

$4.087

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IDEA Electronic Components Group

UK . 679 parts In-Stock

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$4.984

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$4.486

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679

$4.984

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$4.486

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AZTECH Wire

Italy . 578 parts In-Stock

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$11.560

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578

$11.560

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One Stop Electronics

USA . 297 parts In-Stock

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$28.000

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297

$28.000

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Corphita

USA . 3,812 parts In-Stock

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Northwest PG Solutions

USA . 114 parts In-Stock

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Native Components

USA . 105 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the 5962-01-083-3924 OTP ROM from Texas Instruments. Manufactured to the highest quality standards, this versatile component offers reliability and performance that you can trust. Ideal for military-grade applications, this OTP ROM provides secure storage for critical data while operating efficiently in extreme environments. Trust Texas Instruments to deliver a superior product that exceeds expectations and adds value to your projects. Experience the advantage of seamless integration and enhanced functionality with the 5962-01-083-3924 - the perfect choice for your next mission-critical application.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package enhances durability and reliability, making it suitable for harsh environmental conditions.

Screening Level: MIL-STD-883 Class B (Modified)

Compliance with military screening standards ensures high quality and reliability of the product.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage compatibility makes it easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for use in various industrial applications.

Organization: 512X8

Efficient memory organization for storing and accessing data efficiently.

Technology: TTL

TTL technology ensures reliable and fast operation of the OTP ROM.

Memory Width: 8

8-bit memory width provides versatility in storing different types of data.

No. of Words: 512 words

Ample storage capacity for storing a significant amount of information.

Memory Density: 4096 bit

High memory density allows for storing a large amount of data in a compact form factor.

Maximum Access Time: 85 ns

Fast access time ensures quick retrieval of data for efficient processing.

Technical Specifications

OTP ROM 5962-01-083-3924 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-083-3924 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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