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TBP24S81-55N3

Texas Instruments

TBP24S81-55N3 by Texas Instruments

TBP24S81-55N3 by Texas Instruments is a 2KX4 OTP ROM with 8192-bit memory density and 55ns max access time. It operates b/w 0 to 70°C, making it suitable for commercial applications requiring fast data retrieval in a compact IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,213 parts In-Stock

1+ parts

-

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4,213

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Vyrian

USA . 1,912 parts In-Stock

1+ parts

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1k+ parts

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1,912

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,275 parts In-Stock

1+ parts

$2.698

100+ parts

-

1k+ parts

$3.179

10k+ parts

-

2,275

$2.698

-

$3.179

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ChromeModa Solutions

Germany . 6,757 parts In-Stock

1+ parts

$3.031

100+ parts

$2.485

1k+ parts

-

10k+ parts

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6,757

$3.031

$2.485

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IDEA Electronic Components Group

UK . 1,770 parts In-Stock

1+ parts

$3.031

100+ parts

-

1k+ parts

$2.728

10k+ parts

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1,770

$3.031

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$2.728

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AZTECH Wire

Italy . 247 parts In-Stock

1+ parts

$6.887

100+ parts

-

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247

$6.887

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One Stop Electronics

USA . 1,543 parts In-Stock

1+ parts

$9.000

100+ parts

-

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1,543

$9.000

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Corphita

USA . 4,736 parts In-Stock

1+ parts

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4,736

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DigiPath Technology Company

USA . 1,190 parts In-Stock

1+ parts

-

100+ parts

$2.733

1k+ parts

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1,190

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$2.733

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Overview

Experience unparalleled quality and reliability with the Texas Instruments TBP24S81-55N3 OTP ROM. As a leading manufacturer in the industry, Texas Instruments ensures top-notch performance and durability in all their products. The TBP24S81-55N3 offers a wide range of applications in various industries, providing customers with endless possibilities. Say goodbye to data loss and hello to seamless operations with this innovative product. Upgrade your systems today and enjoy the benefits of high-speed access, secure storage, and unmatched efficiency. Elevate your business with the Texas Instruments TBP24S81-55N3 OTP ROM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the component, making it suitable for a variety of environments.

No. of Terminals: 18

Sufficient number of terminals for connectivity and integration into different circuits or systems.

Maximum Operating Temperature: 70 °C

Can operate efficiently within a wide temperature range, offering versatility in usage.

Organization: 2KX4

Efficient organization of memory cells, enabling quick access to stored data.

Technology: TTL

TTL technology ensures reliable and fast performance in data transmission and processing.

Maximum Supply Current: 175 mA

Low power consumption for energy efficiency in operation.

Memory Density: 8192 bit

High memory density for storing a large amount of data in a compact space.

Memory IC Type: OTP ROM

One-time programmable memory for secure data storage without the risk of accidental erasure.

Maximum Access Time: 55 ns

Fast access time for retrieving data promptly, enhancing overall system performance.

Technical Specifications

OTP ROM TBP24S81-55N3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-PDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

OTP ROMs

Maximum Supply Current:

175 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24S81-55N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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