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SN10139J

Texas Instruments

SN10139J by Texas Instruments

The Texas Instruments SN10139J is an OTP ROM IC with 32x8 organization, ECL10K technology, and 20ns max access time. It has a rectangular ceramic package with 16 terminals in-line style. Ideal for applications requiring non-volatile memory storage in environments ranging from 0°C to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,241 parts In-Stock

1+ parts

-

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4,241

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Digiode

USA . 2,841 parts In-Stock

1+ parts

-

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2,841

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 643 parts In-Stock

1+ parts

$4.086

100+ parts

-

1k+ parts

$4.546

10k+ parts

-

643

$4.086

-

$4.546

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DigiPath Technology Company

USA . 2,186 parts In-Stock

1+ parts

$4.499

100+ parts

-

1k+ parts

-

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2,186

$4.499

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-

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ChromeModa Solutions

Germany . 4,278 parts In-Stock

1+ parts

$4.591

100+ parts

$3.765

1k+ parts

-

10k+ parts

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4,278

$4.591

$3.765

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IDEA Electronic Components Group

UK . 1,555 parts In-Stock

1+ parts

$4.591

100+ parts

-

1k+ parts

$4.132

10k+ parts

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1,555

$4.591

-

$4.132

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AZTECH Wire

Italy . 289 parts In-Stock

1+ parts

$7.114

100+ parts

-

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289

$7.114

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One Stop Electronics

USA . 724 parts In-Stock

1+ parts

$16.000

100+ parts

-

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724

$16.000

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Corphita

USA . 693 parts In-Stock

1+ parts

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693

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Overview

Unlock endless possibilities with the SN10139J from Texas Instruments, a high-quality OTP ROM that offers unparalleled reliability and performance. Ideal for a wide range of applications, this versatile chip is a game-changer in the world of technology. Experience seamless operation, efficient functionality, and unmatched value with this innovative product. Discover the advantages of Texas Instruments' cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal stability and mechanical durability, ensuring reliable performance even in harsh environments.

No. of Terminals: 16

Having 16 terminals allows for versatile connections and integration into various systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this OTP ROM can function reliably even in warmer conditions.

Organization: 32X8

The 32X8 organization provides a good balance between memory capacity and access speed, suitable for many applications.

Technology: ECL10K

ECL10K technology offers high-speed and low-power consumption, making this OTP ROM efficient and responsive.

Memory IC Type: OTP ROM

Being OTP (One-Time Programmable) ROM means that the memory content is non-volatile and cannot be changed, ensuring data integrity and security.

Maximum Access Time: 20 ns

With a maximum access time of 20 nanoseconds, this OTP ROM can retrieve data quickly, enhancing overall system performance.

Technical Specifications

OTP ROM SN10139J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

20 ns

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

145 mA

Surface Mount:

NO

Technology:

ECL10K

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN10139J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-133-9668, 5962011339668, 5962-01-149-9458, 5962011499458

NIIN

011339668, 011499458

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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