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TBP28L42N3

Texas Instruments

TBP28L42N3 by Texas Instruments

TBP28L42N3 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 95ns and operates in commercial temperature grades. This rectangular package with 20 terminals is ideal for applications requiring non-volatile memory storage in TTL technology environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,526 parts In-Stock

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5,526

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Digiode

USA . 1,186 parts In-Stock

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1,186

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 617 parts In-Stock

1+ parts

$4.182

100+ parts

$388.372

1k+ parts

$3.764

10k+ parts

-

617

$4.182

$388.372

$3.764

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DigiPath Technology Company

USA . 2,053 parts In-Stock

1+ parts

$4.605

100+ parts

$4.237

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-

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2,053

$4.605

$4.237

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ChromeModa Solutions

Germany . 6,079 parts In-Stock

1+ parts

$4.699

100+ parts

$3.853

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-

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6,079

$4.699

$3.853

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IDEA Electronic Components Group

UK . 1,195 parts In-Stock

1+ parts

$4.699

100+ parts

-

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$4.229

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1,195

$4.699

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$4.229

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AZTECH Wire

Italy . 210 parts In-Stock

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$8.136

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210

$8.136

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One Stop Electronics

USA . 568 parts In-Stock

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$10.000

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568

$10.000

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Corphita

USA . 1,262 parts In-Stock

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Overview

Unleash the power of innovation with the TBP28L42N3 by Texas Instruments. As a leader in electronic components, Texas Instruments delivers unparalleled quality and reliability in every product they create. The TBP28L42N3 falls under the OTP ROM category, making it an essential component for a wide range of applications. With a nominal supply voltage of 5V, this memory IC offers fast access times and a high memory density of 4096 bits. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the TBP28L42N3 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easy to handle and suitable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard operating voltages, making it easy to integrate into various systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand higher temperatures without compromising performance, increasing its reliability in diverse environments.

Technology: TTL

The use of TTL technology ensures fast and reliable data processing, making this OTP ROM an efficient choice for quick access to stored information.

Memory Density: 4096 bit

The high memory density of 4096 bits allows for storing a large amount of data in a compact device, providing ample storage capacity for various applications.

Maximum Access Time: 95 ns

The maximum access time of 95 nanoseconds indicates fast read/write speeds, enabling quick retrieval of data when needed, enhancing the overall performance of the product.

Technical Specifications

OTP ROM TBP28L42N3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

95 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP28L42N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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