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SNC54S479J

Texas Instruments

SNC54S479J by Texas Instruments

The Texas Instruments SNC54S479J is a MIL-STD-883 Class B OTP ROM with 1KX8 organization and 8192-bit memory density. Operating b/w -55°C to 125°C, it features TTL technology, through-hole terminals, and is ideal for military-grade applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,770 parts In-Stock

1+ parts

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5,770

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Digiode

USA . 1,807 parts In-Stock

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1,807

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,169 parts In-Stock

1+ parts

$2.675

100+ parts

-

1k+ parts

$3.160

10k+ parts

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1,169

$2.675

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$3.160

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IDEA Electronic Components Group

UK . 1,959 parts In-Stock

1+ parts

$3.006

100+ parts

-

1k+ parts

$2.705

10k+ parts

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1,959

$3.006

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$2.705

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ChromeModa Solutions

Germany . 1,705 parts In-Stock

1+ parts

$3.006

100+ parts

$2.465

1k+ parts

-

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1,705

$3.006

$2.465

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One Stop Electronics

USA . 551 parts In-Stock

1+ parts

$9.000

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551

$9.000

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AZTECH Wire

Italy . 683 parts In-Stock

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$16.200

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683

$16.200

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Corphita

USA . 3,623 parts In-Stock

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3,623

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DigiPath Technology Company

USA . 491 parts In-Stock

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100+ parts

$2.710

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491

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$2.710

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Overview

Enhance your electronic designs with the high-quality SNC54S479J OTP ROM by Texas Instruments. Manufactured with precision and expertise, this device offers reliable performance in a MILITARY-grade package. Perfect for applications requiring secure and non-volatile memory storage, this OTP ROM provides peace of mind with its durability and stability. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations and adds value to your projects. Experience the benefits of this versatile component today!

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package body material provides excellent thermal properties, making it suitable for military grade applications where temperature fluctuations are common.

Screening Level: MIL-STD-883 Class B (Modified)

Meeting MIL-STD-883 Class B standards means the product has undergone rigorous testing and quality control measures, ensuring reliability and durability in harsh environments.

No. of Terminals: 24

Having 24 terminals allows for versatile connectivity options, making it compatible with a variety of systems and integration scenarios.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand elevated temperatures without compromising performance.

Memory Width: 8

The memory width of 8 bits allows for efficient data storage and retrieval, making it suitable for applications requiring precise and quick access to information.

Technical Specifications

OTP ROM SNC54S479J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNC54S479J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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