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5962-01-214-2162

Texas Instruments

5962-01-214-2162 by Texas Instruments

Texas Instruments' 5962-01-214-2162 is a MILITARY-grade OTP ROM with 512x8 organization, 4096-bit memory density, and 85ns max access time. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,876 parts In-Stock

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7,876

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Digiode

USA . 2,835 parts In-Stock

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2,835

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Distributors (Availability)

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One Stop Electronics

USA . 897 parts In-Stock

1+ parts

$1.000

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-

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897

$1.000

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Parana Technologies

USA . 1,907 parts In-Stock

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$3.972

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$4.442

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1,907

$3.972

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$4.442

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DigiPath Technology Company

USA . 1,025 parts In-Stock

1+ parts

$4.374

100+ parts

$4.024

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1,025

$4.374

$4.024

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ChromeModa Solutions

Germany . 1,620 parts In-Stock

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$4.463

100+ parts

$3.660

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1,620

$4.463

$3.660

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IDEA Electronic Components Group

UK . 1,378 parts In-Stock

1+ parts

$4.463

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$4.017

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1,378

$4.463

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$4.017

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AZTECH Wire

Italy . 361 parts In-Stock

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$8.599

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361

$8.599

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Corphita

USA . 2,992 parts In-Stock

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Native Components

USA . 428 parts In-Stock

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428

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Northwest PG Solutions

USA . 212 parts In-Stock

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Overview

Elevate your projects with the reliable 5962-01-214-2162 OTP ROM by Texas Instruments. Crafted with top-quality ceramic material and meeting MIL-STD-883 Class B standards, this rectangular package houses a powerful 512X8 memory organization. Perfect for military-grade applications, this TTL technology-based ROM offers fast access times and a wide operating temperature range. Trust in Texas Instruments for exceptional performance and durability in all your electronic designs.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent thermal conductivity and high mechanical strength, making the OTP ROM highly durable and reliable for long-term use.

Screening Level: MIL-STD-883 Class B (Modified)

Being compliant with MIL-STD-883 Class B (Modified) screening level ensures that the OTP ROM meets stringent quality and reliability standards for military and aerospace applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with most electronic systems and easy to integrate into existing designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, the OTP ROM can withstand harsh environmental conditions and maintain stable performance in extreme temperatures.

Organization: 512X8

Organized as 512 words by 8 bits, this OTP ROM offers a sufficient storage capacity and data width for storing and retrieving essential information efficiently.

Technology: TTL

Utilizing TTL technology ensures high-speed data processing and low power consumption, making the OTP ROM suitable for applications requiring fast and efficient operations.

Memory IC Type: OTP ROM

Being an OTP ROM (One-Time Programmable Read-Only Memory) eliminates the need for ongoing programming and ensures data security, making it ideal for applications where data retention is critical.

Maximum Access Time: 85 ns

With a fast maximum access time of 85 ns, the OTP ROM provides quick access to stored data, enhancing overall system performance and responsiveness.

Technical Specifications

OTP ROM 5962-01-214-2162 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-214-2162 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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