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JBP38SA165MJT

Texas Instruments

JBP38SA165MJT by Texas Instruments

JBP38SA165MJT by Texas Instruments is a MILITARY-grade OTP ROM with 2KX8 organization and 16384-bit memory density. Featuring a temperature range of -55 to 125 °C, it is ideal for applications requiring reliable non-volatile memory storage in harsh environments. With a package style of IN-LINE and 24 terminals, this TTL technology device offers high performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,485 parts In-Stock

1+ parts

-

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3,485

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Digiode

USA . 401 parts In-Stock

1+ parts

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1k+ parts

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401

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 131 parts In-Stock

1+ parts

$2.604

100+ parts

-

1k+ parts

$3.094

10k+ parts

-

131

$2.604

-

$3.094

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DigiPath Technology Company

USA . 1,741 parts In-Stock

1+ parts

$2.867

100+ parts

$2.638

1k+ parts

-

10k+ parts

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1,741

$2.867

$2.638

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ChromeModa Solutions

Germany . 3,295 parts In-Stock

1+ parts

$2.926

100+ parts

$2.399

1k+ parts

-

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3,295

$2.926

$2.399

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IDEA Electronic Components Group

UK . 609 parts In-Stock

1+ parts

$2.926

100+ parts

-

1k+ parts

$2.633

10k+ parts

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609

$2.926

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$2.633

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AZTECH Wire

Italy . 401 parts In-Stock

1+ parts

$5.127

100+ parts

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10k+ parts

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401

$5.127

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One Stop Electronics

USA . 1,638 parts In-Stock

1+ parts

$11.000

100+ parts

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1,638

$11.000

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Corphita

USA . 2,721 parts In-Stock

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2,721

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Overview

Discover the JBP38SA165MJT by Texas Instruments, a top-quality OTP ROM memory IC that offers exceptional reliability and performance. Manufactured by a trusted industry leader, this product is ideal for military-grade applications where ruggedness and durability are paramount. With a memory density of 16384 bits and an organization of 2Kx8, this OTP ROM is designed to meet the demanding requirements of critical systems. Trust Texas Instruments for cutting-edge technology and unmatched value in memory solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal conductivity and durability, making it suitable for use in harsh environments.

Screening Level: 38535Q/M;38534H;883B

This high screening level ensures reliability and quality of the product, meeting stringent military standards.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy integration into electronic devices.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without performance degradation, suitable for industrial and military applications.

Organization: 2KX8

Organized as 2K words by 8 bits, providing a balance between capacity and data width for efficient data storage.

Technology: TTL

Uses TTL technology known for reliability and compatibility with various systems, ensuring stable performance.

No. of Words: 2048 words

Offers ample storage capacity for storing program instructions or data in digital systems.

Memory Width: 8

8-bit memory width allows for efficient data processing and retrieval in parallel.

Technical Specifications

OTP ROM JBP38SA165MJT attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

2KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP38SA165MJT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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