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SNC54S478J

Texas Instruments

SNC54S478J by Texas Instruments

SNC54S478J by Texas Instruments is a MIL-STD-883 Class B OTP ROM with 1KX8 organization, 8192-bit memory density, and 70ns max access time. It operates b/w -55 to 125°C, ideal for military applications requiring reliable data storage in harsh environments. With a supply voltage of 5V and TTL technology, it offers high performance in a ceramic package with 24 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,721 parts In-Stock

1+ parts

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6,721

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Digiode

USA . 655 parts In-Stock

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655

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,224 parts In-Stock

1+ parts

$1.791

100+ parts

-

1k+ parts

$2.352

10k+ parts

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1,224

$1.791

-

$2.352

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DigiPath Technology Company

USA . 1,949 parts In-Stock

1+ parts

$1.972

100+ parts

$1.814

1k+ parts

-

10k+ parts

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1,949

$1.972

$1.814

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ChromeModa Solutions

Germany . 6,230 parts In-Stock

1+ parts

$2.012

100+ parts

$1.650

1k+ parts

-

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6,230

$2.012

$1.650

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IDEA Electronic Components Group

UK . 861 parts In-Stock

1+ parts

$2.012

100+ parts

-

1k+ parts

$1.811

10k+ parts

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861

$2.012

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$1.811

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One Stop Electronics

USA . 956 parts In-Stock

1+ parts

$3.000

100+ parts

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956

$3.000

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AZTECH Wire

Italy . 442 parts In-Stock

1+ parts

$6.992

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442

$6.992

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Corphita

USA . 2,246 parts In-Stock

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2,246

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Overview

Elevate your projects with the SNC54S478J OTP ROM from Texas Instruments. Known for their exceptional quality and reliability, Texas Instruments delivers a top-notch product that exceeds expectations. This versatile component is ideal for various applications in military-grade environments, offering unmatched performance and durability. Experience the value of seamless integration and unparalleled efficiency with the SNC54S478J, providing customers with the advantages they need to succeed in their projects. Choose Texas Instruments for superior quality and innovation.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection and reliability, making this OTP ROM suitable for rugged environments and long-term use.

Screening Level: MIL-STD-883 Class B (Modified)

Meeting military screening standards ensures high quality and reliability, making this OTP ROM suitable for applications where performance and durability are critical.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes integration into existing systems easy and efficient.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this OTP ROM can perform reliably in a wide range of environmental conditions.

Memory IC Type: OTP ROM

Being a One-Time Programmable Read-Only Memory ensures data security and integrity, making this product suitable for applications where data protection is essential.

Technical Specifications

OTP ROM SNC54S478J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNC54S478J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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