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SNC54S474J

Texas Instruments

SNC54S474J by Texas Instruments

SNC54S474J by Texas Instruments is a MIL-STD-883 Class B OTP ROM with 512x8 organization and 4096-bit memory density. Operating b/w -55°C to 125°C, it has a max access time of 85ns. Ideal for military applications requiring reliable data storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,905 parts In-Stock

1+ parts

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7,905

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Digiode

USA . 3,814 parts In-Stock

1+ parts

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-

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3,814

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 175 parts In-Stock

1+ parts

$3.030

100+ parts

-

1k+ parts

$3.541

10k+ parts

-

175

$3.030

-

$3.541

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DigiPath Technology Company

USA . 1,387 parts In-Stock

1+ parts

$3.337

100+ parts

$3.070

1k+ parts

-

10k+ parts

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1,387

$3.337

$3.070

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IDEA Electronic Components Group

UK . 1,735 parts In-Stock

1+ parts

$3.405

100+ parts

-

1k+ parts

$3.064

10k+ parts

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1,735

$3.405

-

$3.064

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ChromeModa Solutions

Germany . 417 parts In-Stock

1+ parts

$3.405

100+ parts

$2.792

1k+ parts

-

10k+ parts

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417

$3.405

$2.792

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One Stop Electronics

USA . 602 parts In-Stock

1+ parts

$9.000

100+ parts

-

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602

$9.000

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AZTECH Wire

Italy . 492 parts In-Stock

1+ parts

$19.589

100+ parts

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492

$19.589

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Corphita

USA . 3,665 parts In-Stock

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3,665

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Overview

Upgrade your projects with the SNC54S474J by Texas Instruments, a high-quality OTP ROM that offers reliability and performance. Designed by a trusted manufacturer, this product is ideal for military-grade applications where precision is key. With its 512x8 organization and fast access time of 85ns, this memory IC provides seamless functionality in extreme temperatures. Trust in Texas Instruments for top-notch technology that delivers value and peace of mind to customers.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides excellent durability and protection for the OTP ROM, ensuring longevity and reliability in various operating conditions.

Nominal Supply Voltage: 5V

Operating at a standard voltage of 5V makes integration and power management easier for compatibility with other components in the system.

Maximum Operating Temperature: 125°C

With a high maximum operating temperature, this OTP ROM can withstand extreme conditions and perform reliably in harsh environments.

Technology: TTL

TTL technology offers fast switching speeds and low power consumption, making this OTP ROM efficient and suitable for high-performance applications.

Memory Density: 4096 bit

The high memory density of 4096 bit allows for storing a large amount of data in a compact space, making it ideal for applications requiring extensive data storage.

Maximum Access Time: 85 ns

With a fast maximum access time of 85 ns, this OTP ROM can quickly retrieve data, improving system responsiveness and performance.

Technical Specifications

OTP ROM SNC54S474J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNC54S474J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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