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TBP18SA030J4

Texas Instruments

TBP18SA030J4 by Texas Instruments

TBP18SA030J4 by Texas Instruments is a 32x8 OTP ROM with 5V supply, 110mA max current, and 40ns access time. Ideal for commercial applications requiring fast memory access in a ceramic rectangular package with 16 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,993 parts In-Stock

1+ parts

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5,993

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Digiode

USA . 4,962 parts In-Stock

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4,962

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,862 parts In-Stock

1+ parts

$3.283

100+ parts

$304.896

1k+ parts

$2.955

10k+ parts

-

1,862

$3.283

$304.896

$2.955

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DigiPath Technology Company

USA . 521 parts In-Stock

1+ parts

$3.615

100+ parts

$3.326

1k+ parts

-

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521

$3.615

$3.326

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IDEA Electronic Components Group

UK . 1,981 parts In-Stock

1+ parts

$3.689

100+ parts

-

1k+ parts

$3.320

10k+ parts

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1,981

$3.689

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$3.320

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ChromeModa Solutions

Germany . 733 parts In-Stock

1+ parts

$3.689

100+ parts

$3.025

1k+ parts

-

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733

$3.689

$3.025

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One Stop Electronics

USA . 341 parts In-Stock

1+ parts

$16.000

100+ parts

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341

$16.000

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AZTECH Wire

Italy . 193 parts In-Stock

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$19.831

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193

$19.831

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Corphita

USA . 1,398 parts In-Stock

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Overview

Experience the reliability and performance of Texas Instruments with the TBP18SA030J4 OTP ROM. Ideal for a wide range of applications, this ceramic rectangular package offers 32x8 organization and a maximum supply current of 110mA. With a commercial temperature grade and fast access time of 40ns, this product provides customers with exceptional value and quality for their memory needs. Trust Texas Instruments for top-notch technology that delivers results.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent durability and thermal conductivity, making the product reliable and long-lasting.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power supplies.

No. of Terminals: 16

Having 16 terminals allows for easy integration and connections within a circuit or system.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, the product can function well even in higher temperature environments.

Organization: 32X8

Organized as 32 words by 8 memory width, providing a good balance of storage capacity and data retrieval speed.

Technology: TTL

Utilizing TTL technology ensures reliable and consistent digital signal processing.

No. of Words: 32 words

Offering 32 words of memory provides sufficient storage for data and instructions.

Memory Width: 8

With a memory width of 8, the product can handle data in 8-bit chunks efficiently.

Terminal Pitch: 2.54 mm

Having a terminal pitch of 2.54mm allows for easy placement on a circuit board and facilitates soldering.

Memory IC Type: OTP ROM

Being an OTP ROM (One-Time Programmable Read-Only Memory) type ensures that the memory contents are secure and cannot be altered, which may be advantageous for certain applications.

Maximum Access Time: 40 ns

With a maximum access time of 40 nanoseconds, the product can quickly retrieve data when needed, enhancing overall performance.

Technical Specifications

OTP ROM TBP18SA030J4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP18SA030J4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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