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CMS214-250

Texas Instruments

CMS214-250 by Texas Instruments

Texas Instruments' CMS214-250 is a 128KX8 OTP ROM with 60 terminals. Operating at 5V, it offers 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for commercial applications, this CMOS technology-based device has a memory density of 1048576 bit and max access time of 250 ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,888 parts In-Stock

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Digiode

USA . 4,043 parts In-Stock

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4,043

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Distributors (Availability)

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Parana Technologies

USA . 2,169 parts In-Stock

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$4.203

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$4.640

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2,169

$4.203

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$4.640

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DigiPath Technology Company

USA . 1,969 parts In-Stock

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$4.629

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$4.258

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1,969

$4.629

$4.258

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ChromeModa Solutions

Germany . 4,042 parts In-Stock

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$4.723

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$3.873

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4,042

$4.723

$3.873

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IDEA Electronic Components Group

UK . 674 parts In-Stock

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$4.723

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$4.251

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674

$4.723

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AZTECH Wire

Italy . 677 parts In-Stock

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$8.409

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677

$8.409

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One Stop Electronics

USA . 1,318 parts In-Stock

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$28.000

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Corphita

USA . 4,818 parts In-Stock

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Native Components

USA . 545 parts In-Stock

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$4.564

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Northwest PG Solutions

USA . 124 parts In-Stock

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$4.611

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Overview

Unlock the power of reliable and efficient data storage with the Texas Instruments CMS214-250 OTP ROM. Manufactured by industry leader Texas Instruments, this microelectronic assembly offers 128Kx8 organization and 131072 words of memory capacity. Ideal for a wide range of applications, from consumer electronics to industrial automation, this device operates asynchronously with a common input/output type. With a maximum access time of 250 ns and a standby current of 0.007 Amp, this OTP ROM delivers high performance and value to customers seeking top-notch memory solutions. Experience faster data access and seamless integration with the CMS214-250 from Texas Instruments.

Feature Benefit Bullets

Operating Mode: ASYNCHRONOUS

Allows for independent operation without synchronization, providing flexibility and ease of use.

Input/Output Type: COMMON

Simplifies interfacing with other devices and reduces the complexity of the system.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply that is widely available and easily compatible with other components.

No. of Terminals: 60

Sufficient number of terminals for connecting to various external components and peripherals.

Maximum Operating Temperature: 55 °C

Can operate efficiently in moderate temperature environments without overheating.

Organization: 128KX8

Organized in a way that allows for efficient data storage and retrieval in the specified format.

Output Characteristics: 3-STATE

Ability to switch output to high impedance state, enabling multiple devices to share the same bus.

Temperature Grade: COMMERCIAL

Suitable for use in commercial applications where temperature requirements are standard.

Technology: CMOS

Low power consumption and high noise immunity, making it energy efficient and reliable.

Parallel or Serial: PARALLEL

Parallel data transfer allows for faster operation and simultaneous access to multiple memory locations.

Memory IC Type: OTP ROM

One Time Programmable Read-Only Memory ensures secure data storage that cannot be altered.

Technical Specifications

OTP ROM CMS214-250 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

X-XXMA-X60

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

60

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

55 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Equivalence Code:

CARD60

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Trade Compliance

CMS214-250 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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