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TBP28L86AJW

Texas Instruments

TBP28L86AJW by Texas Instruments

TBP28L86AJW by Texas Instruments is an OTP ROM with 1KX8 organization, 8192 bit memory density, and 110 ns max access time. It is used in applications requiring non-volatile memory storage with a parallel interface, operating at temperatures b/w 0 to 70 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,028 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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6,028

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Digiode

USA . 4,174 parts In-Stock

1+ parts

-

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1k+ parts

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4,174

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 465 parts In-Stock

1+ parts

$4.185

100+ parts

-

1k+ parts

$4.626

10k+ parts

-

465

$4.185

-

$4.626

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DigiPath Technology Company

USA . 2,126 parts In-Stock

1+ parts

$4.608

100+ parts

$4.239

1k+ parts

-

10k+ parts

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2,126

$4.608

$4.239

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ChromeModa Solutions

Germany . 4,162 parts In-Stock

1+ parts

$4.702

100+ parts

$3.856

1k+ parts

-

10k+ parts

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4,162

$4.702

$3.856

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IDEA Electronic Components Group

UK . 240 parts In-Stock

1+ parts

$4.702

100+ parts

-

1k+ parts

$4.232

10k+ parts

-

240

$4.702

-

$4.232

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AZTECH Wire

Italy . 859 parts In-Stock

1+ parts

$7.885

100+ parts

-

1k+ parts

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10k+ parts

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859

$7.885

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One Stop Electronics

USA . 1,176 parts In-Stock

1+ parts

$10.000

100+ parts

-

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1,176

$10.000

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Corphita

USA . 969 parts In-Stock

1+ parts

-

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969

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Overview

Unlock the power of cutting-edge technology with the TBP28L86AJW by Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled quality and reliability. Ideal for a wide range of applications, this versatile product provides exceptional value and benefits to customers. Experience seamless performance, enhanced functionality, and superior efficiency with Texas Instruments' innovative solution. Choose excellence, choose Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and protection for the ROM, ensuring reliable performance in various operating conditions.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and efficient operation without strict timing requirements, making it suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power supplies and simplifies integration into existing systems.

No. of Words: 1024 words

With a capacity of 1024 words, this OTP ROM can store a large amount of data, making it ideal for applications that require significant memory storage.

Memory Width: 8

The memory width of 8 bits allows for efficient data access and storage, enhancing the ROM's performance in data retrieval and processing tasks.

Maximum Access Time: 110 ns

The maximum access time of 110 ns ensures fast data retrieval and processing speed, making this OTP ROM suitable for applications that require quick response times.

Technical Specifications

OTP ROM TBP28L86AJW attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

110 ns

JESD-30 Code:

R-GDIP-T24

Length:

32.07 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.7 mm

Sub-Category:

OTP ROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TBP28L86AJW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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