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JBP38S166MJW

Texas Instruments

JBP38S166MJW by Texas Instruments

JBP38S166MJW by Texas Instruments is a MILITARY-grade OTP ROM with 2KX8 organization, 16384-bit memory density, and operates at temperatures ranging from -55 to 125 °C. It has a package style of IN-LINE, 24 terminals with 2.54mm pitch, and is ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,382 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,382

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-

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Digiode

USA . 1,590 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,590

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,373 parts In-Stock

1+ parts

$2.516

100+ parts

-

1k+ parts

$3.005

10k+ parts

-

2,373

$2.516

-

$3.005

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DigiPath Technology Company

USA . 1,470 parts In-Stock

1+ parts

$2.770

100+ parts

$2.549

1k+ parts

-

10k+ parts

-

1,470

$2.770

$2.549

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ChromeModa Solutions

Germany . 3,564 parts In-Stock

1+ parts

$2.827

100+ parts

$2.318

1k+ parts

-

10k+ parts

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3,564

$2.827

$2.318

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IDEA Electronic Components Group

UK . 2,167 parts In-Stock

1+ parts

$2.827

100+ parts

-

1k+ parts

$2.544

10k+ parts

-

2,167

$2.827

-

$2.544

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One Stop Electronics

USA . 709 parts In-Stock

1+ parts

$12.000

100+ parts

-

1k+ parts

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10k+ parts

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709

$12.000

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AZTECH Wire

Italy . 352 parts In-Stock

1+ parts

$19.368

100+ parts

-

1k+ parts

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10k+ parts

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352

$19.368

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Corphita

USA . 4,563 parts In-Stock

1+ parts

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4,563

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Overview

Discover the unbeatable quality and reliability of the JBP38S166MJW by Texas Instruments, a top-tier manufacturer known for cutting-edge technology. This OTP ROM device offers a wide range of applications, making it a versatile solution for various industries. With its MILITARY-grade temperature grade and robust construction, this product ensures optimal performance even in the harshest environments. Experience the value and benefits of this high-quality memory IC, designed to meet your specific needs and exceed your expectations. Trust Texas Instruments for superior products that deliver unmatched advantages to customers worldwide.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection against thermal and mechanical stress, making this OTP ROM highly durable and reliable.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, ensuring compatibility with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

Capable of operating in high temperature environments, making it suitable for demanding military applications.

Organization: 2KX8

Organized into 2K words of 8 bits each, allowing for efficient storage and retrieval of data.

Technology: TTL

Utilizes TTL technology, known for its reliability and simplicity, making this OTP ROM a robust choice for various applications.

Technical Specifications

OTP ROM JBP38S166MJW attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

2KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP38S166MJW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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