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TBP24SA10J4

Texas Instruments

TBP24SA10J4 by Texas Instruments

TBP24SA10J4 by Texas Instruments is a 256x4 OTP ROM with 1024-bit memory density. Operating at 5V, it has a max access time of 65ns and consumes up to 100mA. This TTL technology chip in ceramic package is ideal for commercial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,875 parts In-Stock

1+ parts

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7,875

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Digiode

USA . 997 parts In-Stock

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997

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,974 parts In-Stock

1+ parts

$2.158

100+ parts

-

1k+ parts

$2.671

10k+ parts

-

1,974

$2.158

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$2.671

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DigiPath Technology Company

USA . 1,840 parts In-Stock

1+ parts

$2.376

100+ parts

-

1k+ parts

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10k+ parts

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1,840

$2.376

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ChromeModa Solutions

Germany . 5,501 parts In-Stock

1+ parts

$2.425

100+ parts

$1.988

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-

10k+ parts

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5,501

$2.425

$1.988

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IDEA Electronic Components Group

UK . 2,261 parts In-Stock

1+ parts

$2.425

100+ parts

-

1k+ parts

$2.182

10k+ parts

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2,261

$2.425

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$2.182

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AZTECH Wire

Italy . 852 parts In-Stock

1+ parts

$16.703

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852

$16.703

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One Stop Electronics

USA . 729 parts In-Stock

1+ parts

$19.000

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729

$19.000

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Corphita

USA . 3,332 parts In-Stock

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3,332

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Overview

Upgrade your electronics with the TBP24SA10J4 by Texas Instruments, a high-quality OTP ROM that delivers reliability and performance. Manufactured by industry leader Texas Instruments, this versatile component is ideal for a wide range of applications. With its ceramic package body material and rectangular shape, this product offers durability and stability. Enjoy the benefits of a 256x4 organization, commercial temperature grade, and fast access time of 65 ns. Trust in Texas Instruments to provide top-notch technology that meets your needs. Elevate your projects with the TBP24SA10J4 today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide high durability and resistance to temperature fluctuations, making this OTP ROM suitable for a wide range of operating environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage allows for easy integration into existing systems and provides stable performance.

No. of Terminals: 16

Having 16 terminals allows for versatile connectivity options and ensures compatibility with various circuit designs.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this OTP ROM can handle demanding environments without compromising performance.

Memory Density: 1024 bit

The high memory density of 1024 bits allows for storing a large amount of data in a compact form, making this OTP ROM efficient for memory storage.

Technical Specifications

OTP ROM TBP24SA10J4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

65 ns

JESD-30 Code:

R-XDIP-T16

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Maximum Supply Current:

100 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24SA10J4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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