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TBP18SA42N

Texas Instruments

TBP18SA42N by Texas Instruments

TBP18SA42N by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates b/w 0°C to 70°C, with a max access time of 75ns. Ideal for commercial applications requiring reliable non-volatile memory storage in a compact rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,926 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,926

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Digiode

USA . 1,900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,900

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R&J Components

USA . 8 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 145 parts In-Stock

1+ parts

$2.414

100+ parts

-

1k+ parts

$2.909

10k+ parts

-

145

$2.414

-

$2.909

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DigiPath Technology Company

USA . 2,162 parts In-Stock

1+ parts

$2.658

100+ parts

$2.445

1k+ parts

-

10k+ parts

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2,162

$2.658

$2.445

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ChromeModa Solutions

Germany . 2,323 parts In-Stock

1+ parts

$2.712

100+ parts

$2.224

1k+ parts

-

10k+ parts

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2,323

$2.712

$2.224

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IDEA Electronic Components Group

UK . 618 parts In-Stock

1+ parts

$2.712

100+ parts

-

1k+ parts

$2.441

10k+ parts

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618

$2.712

-

$2.441

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AZTECH Wire

Italy . 402 parts In-Stock

1+ parts

$5.770

100+ parts

-

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10k+ parts

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402

$5.770

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One Stop Electronics

USA . 1,299 parts In-Stock

1+ parts

$22.000

100+ parts

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1,299

$22.000

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Corphita

USA . 257 parts In-Stock

1+ parts

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257

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Overview

Experience the cutting-edge technology of the TBP18SA42N by Texas Instruments, a top-quality OTP ROM that offers unparalleled reliability and performance. Manufactured by industry leader Texas Instruments, this product is designed for a wide range of applications, providing customers with a versatile and dependable solution. With its innovative design and superior functionality, the TBP18SA42N delivers exceptional value and benefits to users, making it the perfect choice for all your memory needs. Upgrade to the TBP18SA42N today and unlock a world of possibilities!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides good durability and protection for the OTP ROM, making it suitable for various environments.

No. of Terminals: 20

Having 20 terminals allows for easy connectivity and integration of the OTP ROM into different systems or devices.

Maximum Operating Temperature: 70 °C

The OTP ROM can function efficiently at up to 70°C, ensuring reliable performance even under higher temperature conditions.

Organization: 512X8

With an organization of 512x8, the OTP ROM offers a good balance of storage capacity and data transfer capabilities for various applications.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transfer within the OTP ROM, making it a suitable choice for high-performance systems.

Memory IC Type: OTP ROM

Being OTP (One-Time Programmable) ROM, this product offers a secure and non-volatile memory solution, ideal for storing critical data that needs to be permanently written.

Technical Specifications

OTP ROM TBP18SA42N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18SA42N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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