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TBP28L42J

Texas Instruments

TBP28L42J by Texas Instruments

TBP28L42J by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 95ns and operates in parallel mode. This rectangular package with ceramic body material is ideal for commercial applications requiring non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,578 parts In-Stock

1+ parts

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2,578

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Digiode

USA . 573 parts In-Stock

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573

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,507 parts In-Stock

1+ parts

$3.000

100+ parts

-

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1,507

$3.000

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Parana Technologies

USA . 2,334 parts In-Stock

1+ parts

$4.471

100+ parts

-

1k+ parts

$4.906

10k+ parts

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2,334

$4.471

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$4.906

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Modulus Dynamics

Lithuania . 100 parts In-Stock

1+ parts

$4.873

100+ parts

$4.873

1k+ parts

$4.873

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-

100

$4.873

$4.873

$4.873

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ChromeModa Solutions

Germany . 5,141 parts In-Stock

1+ parts

$5.024

100+ parts

$4.120

1k+ parts

-

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5,141

$5.024

$4.120

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IDEA Electronic Components Group

UK . 1,720 parts In-Stock

1+ parts

$5.024

100+ parts

-

1k+ parts

$4.522

10k+ parts

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1,720

$5.024

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$4.522

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AZTECH Wire

Italy . 614 parts In-Stock

1+ parts

$11.613

100+ parts

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614

$11.613

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Corphita

USA . 4,885 parts In-Stock

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4,885

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DigiPath Technology Company

USA . 2,237 parts In-Stock

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100+ parts

$4.530

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2,237

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$4.530

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Overview

Unlock endless possibilities with the Texas Instruments TBP28L42J OTP ROM memory IC. Crafted with precision and reliability by a trusted manufacturer, this product is perfect for a wide range of applications. Experience seamless performance with its asynchronous operating mode and 512x8 organization. With a nominal supply voltage of 5V and commercial temperature grade, this memory IC offers unparalleled value and benefits to customers looking for high-quality solutions. Upgrade your projects today with the TBP28L42J and enjoy superior performance and efficiency like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material enhances the durability and reliability of the OTP ROM, making it suitable for harsh operating environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operations without requiring synchronization, providing flexibility in various applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable and consistent power delivery to the OTP ROM, promoting reliable performance.

Memory Density: 4096 bit

With a high memory density of 4096 bits, this OTP ROM can store a large amount of data, increasing its versatility for different applications.

Technology: BIPOLAR

The bipolar technology utilized in this OTP ROM provides high-speed and efficient operation, making it suitable for applications that require fast access times.

Technical Specifications

OTP ROM TBP28L42J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

95 ns

JESD-30 Code:

R-GDIP-T20

Length:

24.195 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP28L42J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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