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SNM54S470J

Texas Instruments

SNM54S470J by Texas Instruments

SNM54S470J by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 80ns and operates in commercial temperature grades. This device, featuring MIL-STD-883 Class C screening, is ideal for applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,792 parts In-Stock

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8,792

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Digiode

USA . 465 parts In-Stock

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465

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 903 parts In-Stock

1+ parts

$1.000

100+ parts

-

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903

$1.000

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Parana Technologies

USA . 764 parts In-Stock

1+ parts

$5.296

100+ parts

-

1k+ parts

$5.925

10k+ parts

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764

$5.296

-

$5.925

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DigiPath Technology Company

USA . 664 parts In-Stock

1+ parts

$5.832

100+ parts

$5.365

1k+ parts

-

10k+ parts

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664

$5.832

$5.365

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ChromeModa Solutions

Germany . 2,070 parts In-Stock

1+ parts

$5.951

100+ parts

$4.880

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2,070

$5.951

$4.880

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IDEA Electronic Components Group

UK . 702 parts In-Stock

1+ parts

$5.951

100+ parts

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1k+ parts

$5.356

10k+ parts

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702

$5.951

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$5.356

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AZTECH Wire

Italy . 468 parts In-Stock

1+ parts

$18.230

100+ parts

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468

$18.230

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Corphita

USA . 431 parts In-Stock

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431

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Overview

Unlock the power of innovative technology with the Texas Instruments SNM54S470J OTP ROM. Manufactured by a trusted industry leader, this high-quality product offers reliability and performance that exceeds expectations. Ideal for a wide range of applications, this OTP ROM provides seamless integration and efficient operation. Experience the value and benefits of choosing Texas Instruments for your electronic needs - trust in the SNM54S470J for superior quality and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and protection for the OTP ROM product, ensuring long-lasting performance.

Screening Level: MIL-STD-883 Class C

MIL-STD-883 Class C screening ensures that the OTP ROM product meets high-quality standards and reliability requirements.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this OTP ROM product compatible with a wide range of systems and applications.

Organization: 256X8

With an organization of 256X8, this OTP ROM product offers efficient memory storage and retrieval capabilities for various data requirements.

Technology: TTL

Utilizing TTL technology ensures high-speed and reliable operation of the OTP ROM product, making it suitable for performance-critical applications.

Maximum Access Time: 80 ns

A maximum access time of 80 ns allows for quick read operations, enhancing the overall speed and responsiveness of the OTP ROM product.

Technical Specifications

OTP ROM SNM54S470J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class C

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNM54S470J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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