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SNM54S475J

Texas Instruments

SNM54S475J by Texas Instruments

SNM54S475J by Texas Instruments is a MIL-STD-883 Class C OTP ROM with 512x8 organization and 4096-bit memory density. It operates b/w -55°C to 125°C, has a max access time of 85ns, and consumes up to 155mA. Ideal for military applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,750 parts In-Stock

1+ parts

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8,750

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Digiode

USA . 2,285 parts In-Stock

1+ parts

-

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1k+ parts

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2,285

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,871 parts In-Stock

1+ parts

$2.375

100+ parts

-

1k+ parts

$2.873

10k+ parts

-

1,871

$2.375

-

$2.873

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DigiPath Technology Company

USA . 765 parts In-Stock

1+ parts

$2.616

100+ parts

$2.406

1k+ parts

-

10k+ parts

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765

$2.616

$2.406

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ChromeModa Solutions

Germany . 2,280 parts In-Stock

1+ parts

$2.669

100+ parts

$2.189

1k+ parts

-

10k+ parts

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2,280

$2.669

$2.189

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IDEA Electronic Components Group

UK . 1,945 parts In-Stock

1+ parts

$2.669

100+ parts

-

1k+ parts

$2.402

10k+ parts

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1,945

$2.669

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$2.402

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One Stop Electronics

USA . 679 parts In-Stock

1+ parts

$15.000

100+ parts

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679

$15.000

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AZTECH Wire

Italy . 784 parts In-Stock

1+ parts

$16.063

100+ parts

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784

$16.063

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Corphita

USA . 953 parts In-Stock

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953

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Overview

Elevate your projects with the SNM54S475J by Texas Instruments, a top-of-the-line OTP ROM that offers unparalleled quality and reliability. Manufactured by industry leader Texas Instruments, this memory IC boasts a MILITARY-grade screening level and a temperature range of -55 to 125°C. With 512 words of memory and a lightning-fast access time of 85 ns, this versatile component is ideal for a wide range of applications. Trust in Texas Instruments to deliver cutting-edge technology and superior performance with the SNM54S475J.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal conductivity and mechanical strength, making this product reliable for high temperature and rugged environments.

Screening Level: MIL-STD-883 Class C

Compliance with MIL-STD-883 Class C ensures high reliability and quality standards for critical applications in military and aerospace sectors.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM can withstand elevated temperatures without compromising its performance.

Organization: 512X8

The organization of 512 words by 8 bits provides sufficient storage capacity and data output for various applications.

Technology: TTL

TTL technology offers fast signal switching and low power consumption, making this OTP ROM suitable for high-speed applications.

Memory IC Type: OTP ROM

Being a One-Time Programmable Read-Only Memory, this product offers secure data storage and protection against unauthorized modifications.

Technical Specifications

OTP ROM SNM54S475J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class C

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNM54S475J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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