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5962-01-218-8481

Texas Instruments

5962-01-218-8481 by Texas Instruments

Texas Instruments' 5962-01-218-8481 is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it offers a max access time of 75ns and operates in commercial temperature grades. This rectangular ceramic package with 20 terminals is ideal for applications requiring non-volatile memory storage in TTL technology environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,899 parts In-Stock

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4,899

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Digiode

USA . 3,690 parts In-Stock

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3,690

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Parana Technologies

USA . 1,629 parts In-Stock

1+ parts

$3.000

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$3.506

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1,629

$3.000

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$3.506

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ChromeModa Solutions

Germany . 5,536 parts In-Stock

1+ parts

$3.371

100+ parts

$2.764

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5,536

$3.371

$2.764

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IDEA Electronic Components Group

UK . 645 parts In-Stock

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$3.371

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$3.034

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645

$3.371

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$3.034

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AZTECH Wire

Italy . 191 parts In-Stock

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$5.225

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191

$5.225

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One Stop Electronics

USA . 918 parts In-Stock

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$21.000

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918

$21.000

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Corphita

USA . 1,204 parts In-Stock

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Northwest PG Solutions

USA . 928 parts In-Stock

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DigiPath Technology Company

USA . 893 parts In-Stock

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$3.039

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Native Components

USA . 848 parts In-Stock

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Overview

Unlock the power of reliable memory solutions with the 5962-01-218-8481 by Texas Instruments. Crafted with precision and excellence, Texas Instruments stands out as a trusted manufacturer in the industry. This OTP ROM device offers a seamless integration for a wide range of applications, providing unparalleled performance and durability. Experience the value of quality and innovation with this product, delivering efficiency and convenience to customers across various sectors. Elevate your projects with Texas Instruments and discover the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body provides excellent thermal conductivity, ensuring stable operating temperature and durability for long-term usage.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard 5V supply voltage, making it compatible with most systems and easy to integrate.

Organization: 512X8

Organized into 512 words of 8 bits each, offering a good balance between storage capacity and data retrieval speed.

Technology: TTL

Utilizes transistor-transistor logic technology, known for its reliability, low power consumption, and fast operation speeds.

No. of Words: 512 words

Provides ample storage capacity for storing code or data in a compact and efficient manner.

Maximum Access Time: 75 ns

Delivers fast access times, ensuring quick retrieval of information when needed, ideal for applications requiring real-time data processing.

Technical Specifications

OTP ROM 5962-01-218-8481 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-218-8481 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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