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SN74S475J

Texas Instruments

SN74S475J by Texas Instruments

SN74S475J by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates b/w 0-70°C, has a max access time of 75ns, and consumes up to 155mA. Ideal for commercial applications requiring reliable non-volatile memory storage in a ceramic rectangular package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,945 parts In-Stock

1+ parts

-

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7,945

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Digiode

USA . 2,472 parts In-Stock

1+ parts

-

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-

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2,472

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,209 parts In-Stock

1+ parts

$4.000

100+ parts

-

1k+ parts

$4.466

10k+ parts

-

2,209

$4.000

-

$4.466

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DigiPath Technology Company

USA . 676 parts In-Stock

1+ parts

$4.404

100+ parts

$4.052

1k+ parts

-

10k+ parts

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676

$4.404

$4.052

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ChromeModa Solutions

Germany . 5,380 parts In-Stock

1+ parts

$4.494

100+ parts

$3.685

1k+ parts

-

10k+ parts

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5,380

$4.494

$3.685

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IDEA Electronic Components Group

UK . 2,232 parts In-Stock

1+ parts

$4.494

100+ parts

-

1k+ parts

$4.045

10k+ parts

-

2,232

$4.494

-

$4.045

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AZTECH Wire

Italy . 482 parts In-Stock

1+ parts

$14.957

100+ parts

-

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482

$14.957

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One Stop Electronics

USA . 716 parts In-Stock

1+ parts

$26.000

100+ parts

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716

$26.000

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Corphita

USA . 145 parts In-Stock

1+ parts

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145

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Overview

Discover the innovative SN74S475J by Texas Instruments, a high-quality OTP ROM that offers unmatched reliability and performance. With Texas Instrument's reputation for excellence in manufacturing, this product is perfect for a wide range of applications. From industrial to consumer electronics, this versatile device provides value and benefits to customers looking for reliable memory solutions. Trust in Texas Instruments for cutting-edge technology that delivers exceptional results every time. Unlock the potential of your projects with the SN74S475J today!

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides durability and heat resistance, making this product suitable for long-term use in various environments.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and installation in different electronic devices.

No. of Terminals: 24

Having 24 terminals allows for more connectivity options and flexibility in design.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can withstand high temperatures during operation.

Organization: 512X8

512X8 organization provides a good balance between capacity and speed for storing and accessing data.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in cold environments.

Technology: TTL

TTL technology offers reliable and efficient data transfer, enhancing the performance of this OTP ROM.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and stable connections, reducing the risk of disconnection during operation.

Memory Density: 4096 bit

High memory density allows for storing a large amount of data in a compact form factor.

Maximum Access Time: 75 ns

Fast access time of 75 nanoseconds ensures quick retrieval of data, enhancing the overall performance of the product.

Technical Specifications

OTP ROM SN74S475J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S475J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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