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TBP28L45NP3

Texas Instruments

TBP28L45NP3 by Texas Instruments

TBP28L45NP3 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 60ns and operates in commercial temperature grades. This rectangular package with 24 terminals is ideal for applications requiring non-volatile memory storage in TTL technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,558 parts In-Stock

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Digiode

USA . 4,258 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 744 parts In-Stock

1+ parts

$3.980

100+ parts

-

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$4.449

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744

$3.980

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$4.449

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DigiPath Technology Company

USA . 1,964 parts In-Stock

1+ parts

$4.383

100+ parts

$4.032

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1,964

$4.383

$4.032

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ChromeModa Solutions

Germany . 3,634 parts In-Stock

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$4.472

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$3.667

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$4.472

$3.667

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IDEA Electronic Components Group

UK . 27 parts In-Stock

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$4.472

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$4.025

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27

$4.472

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$4.025

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AZTECH Wire

Italy . 374 parts In-Stock

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$5.575

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374

$5.575

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One Stop Electronics

USA . 1,282 parts In-Stock

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$23.000

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$23.000

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Corphita

USA . 4,452 parts In-Stock

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Overview

Elevate your product design with the Texas Instruments TBP28L45NP3 OTP ROM. Crafted by a trusted industry leader, this high-quality memory device offers unmatched reliability and performance for a wide range of applications. Whether you're working on industrial automation, telecommunications, or consumer electronics, this versatile component delivers the value, benefits, and advantages that customers demand. Trust in Texas Instruments to provide cutting-edge technology and innovative solutions for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability for long-term usage.

Nominal Supply Voltage / Vsup (V): 5

Having a stable supply voltage of 5V ensures consistent performance of the OTP ROM.

No. of Terminals: 24

Having 24 terminals allows for easy connectivity and integration into various systems.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this OTP ROM can withstand harsh environmental conditions.

Organization: 512X8

The 512X8 organization provides a good balance between memory capacity and data processing capabilities.

Technology: TTL

TTL technology offers fast and reliable data transfer speeds for efficient performance.

No. of Words: 512 words

Having 512 words of memory capacity allows for storing a significant amount of data.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch enables easy installation and connection of the OTP ROM in various systems.

Memory IC Type: OTP ROM

Being an OTP ROM ensures that the data stored in the memory is non-volatile and cannot be modified, providing data security.

Maximum Access Time: 60 ns

With a maximum access time of 60 nanoseconds, the OTP ROM offers rapid data retrieval for efficient performance.

Technical Specifications

OTP ROM TBP28L45NP3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP28L45NP3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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