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TBP18S42N3

Texas Instruments

TBP18S42N3 by Texas Instruments

TBP18S42N3 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates at 5V, has a max access time of 75ns, and supports TTL technology. This rectangular package with 20 terminals is ideal for commercial applications requiring non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,920 parts In-Stock

1+ parts

-

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1k+ parts

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4,920

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Digiode

USA . 2,577 parts In-Stock

1+ parts

-

100+ parts

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2,577

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,630 parts In-Stock

1+ parts

$4.284

100+ parts

-

1k+ parts

$4.713

10k+ parts

-

1,630

$4.284

-

$4.713

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ChromeModa Solutions

Germany . 4,030 parts In-Stock

1+ parts

$4.813

100+ parts

$3.947

1k+ parts

-

10k+ parts

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4,030

$4.813

$3.947

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IDEA Electronic Components Group

UK . 696 parts In-Stock

1+ parts

$4.813

100+ parts

-

1k+ parts

$4.332

10k+ parts

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696

$4.813

-

$4.332

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AZTECH Wire

Italy . 238 parts In-Stock

1+ parts

$16.297

100+ parts

-

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238

$16.297

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One Stop Electronics

USA . 599 parts In-Stock

1+ parts

$22.000

100+ parts

-

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599

$22.000

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Corphita

USA . 1,744 parts In-Stock

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1,744

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DigiPath Technology Company

USA . 95 parts In-Stock

1+ parts

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100+ parts

$4.339

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95

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$4.339

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Overview

Unlock endless possibilities with the TBP18S42N3 by Texas Instruments, a top-quality OTP ROM that offers unmatched reliability and performance. Manufactured by the renowned Texas Instruments, this product is perfect for a wide range of applications, making it a versatile choice for any project. With a focus on value and innovation, customers can trust in the benefits and advantages that this product provides, ensuring seamless integration and optimal functionality. Experience the difference with the TBP18S42N3 and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the OTP ROM.

Nominal Supply Voltage / Vsup (V): 5

With a standard supply voltage of 5V, this OTP ROM is compatible with most systems and can easily be integrated without the need for additional power adjustments.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows this OTP ROM to function reliably in a wide range of environments, making it versatile and suitable for different applications.

Organization: 512X8

The organization of 512 words by 8 memory width provides a good balance between memory capacity and access speed, making it efficient for storing and retrieving data.

Technology: TTL

TTL technology ensures high-speed operation and low power consumption, making this OTP ROM an energy-efficient and fast-performing choice for various electronic devices.

Technical Specifications

OTP ROM TBP18S42N3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18S42N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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