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TBP28L45N1

Texas Instruments

TBP28L45N1 by Texas Instruments

TBP28L45N1 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 60ns and operates in commercial temperature grades. This rectangular package with 24 terminals is ideal for applications requiring non-volatile memory storage in TTL technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,732 parts In-Stock

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Digiode

USA . 3,301 parts In-Stock

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3,301

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Distributors (Availability)

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Parana Technologies

USA . 2,249 parts In-Stock

1+ parts

$4.594

100+ parts

-

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$5.056

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2,249

$4.594

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$5.056

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DigiPath Technology Company

USA . 1,886 parts In-Stock

1+ parts

$5.059

100+ parts

$4.654

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-

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1,886

$5.059

$4.654

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ChromeModa Solutions

Germany . 4,448 parts In-Stock

1+ parts

$5.162

100+ parts

$4.233

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4,448

$5.162

$4.233

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IDEA Electronic Components Group

UK . 551 parts In-Stock

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$5.162

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$4.646

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551

$5.162

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$4.646

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AZTECH Wire

Italy . 298 parts In-Stock

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$8.765

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298

$8.765

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One Stop Electronics

USA . 1,211 parts In-Stock

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$15.000

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$15.000

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Corphita

USA . 3,999 parts In-Stock

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Overview

Elevate your projects with the TBP28L45N1 from Texas Instruments, a leading manufacturer known for high-quality components. This OTP ROM offers reliable performance and versatility, making it ideal for a variety of applications. With a nominal supply voltage of 5V and fast access time of 60ns, this memory IC provides unmatched value and benefits to customers. Trust in Texas Instruments for premium solutions that deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the OTP ROM, making it a reliable choice for long-term usage.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage provides a stable power source for the OTP ROM, ensuring consistent performance and reliability.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can withstand higher temperatures without compromising its functionality, making it suitable for various environments.

Organization: 512X8

With an organization of 512 words by 8 memory width, this OTP ROM offers a decent memory capacity and organization for storing and retrieving data efficiently.

Technology: TTL

The use of TTL technology ensures compatibility with a wide range of devices and systems, making this OTP ROM versatile and easy to integrate into different applications.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM offers sufficient storage capacity for various data and program requirements, making it a cost-effective solution for memory storage.

Memory IC Type: OTP ROM

Being an OTP ROM ensures that the data programmed into the memory is non-volatile and cannot be altered or erased, providing secure storage for critical information.

Maximum Access Time: 60 ns

With a maximum access time of 60 nanoseconds, this OTP ROM delivers fast read speeds for quick data retrieval, making it ideal for applications requiring high performance.

Technical Specifications

OTP ROM TBP28L45N1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP28L45N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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